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參數資料
| 型號： | ATF-551M4-TR2 |
| 英文描述： | Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package |
| 中文描述： | 低噪聲增強模式偽HEMT器件的微型無鉛封裝 |
| 文件頁數： | 5/24頁 |
| 文件大小： | 198K |
| 代理商： | ATF-551M4-TR2 |
5
ATF-551M4 Typical Performance Curves
, continued
Notes:
1. Measurements at 2 GHz with biasing 2.7V, 10 mA were made on a fixed tuned production test board that was tuned for optimal OIP3 match with
reasonable noise figure. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on
production test board requirements. Measurements taken other than 2.7V, 10 mA biasing was made using a double stub tuner at the input tuned for
low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
3. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached, the
drain current may increase or point. At lower values of Idsq, the device is running close to class B as power output approaches P1dB. This results in
higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with
active biasing. As an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15 mA as a P1dB of +14.5 dBm is approached.
Figure 11. Gain vs. I
ds
and V
ds
at 2 GHz
[1]
.
I
ds
(
m
A)
G
0
35
15
5
30
25
20
10
20
19
18
17
16
15
2V
2.7V
3V
Figure 12. F
m
in vs. I
ds
and V
ds
at 2 GHz
[2]
.
I
ds
(
m
A)
F
m
i
0
35
15
5
30
25
20
10
0.6
0.5
0.4
0.3
0.2
0.1
0
2V
2.7V
3V
Figure 13. OIP3 vs. I
ds
and V
ds
at 2 GHz
[1]
.
I
ds
(
m
A)
O
m
)
0
35
15
5
30
25
20
10
36
32
28
24
20
16
2V
2.7V
3V
Figure 14. IIP3 vs. I
ds
and V
ds
at 2 GHz
[1]
.
I
ds
(
m
A)
I
m
)
0
35
15
5
30
25
20
10
18
16
14
12
10
8
6
4
2
0
2V
2.7V
3V
Figure 15. P1dB vs. I
dq
and V
ds
at 2 GHz
[1]
.
I
dq
(
m
A)
P
0
35
15
5
30
25
20
10
2V
2.7V
3V
17
16
15
14
13
12
11
10
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相關代理商/技術參數 |
參數描述 |
|---|---|
| ATF-58143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-58143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-58143-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
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