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參數(shù)資料
| 型號： | ATF-551M4-TR2 |
| 英文描述： | Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package |
| 中文描述： | 低噪聲增強模式偽HEMT器件的微型無鉛封裝 |
| 文件頁數(shù)： | 4/24頁 |
| 文件大?。?/td> | 198K |
| 代理商： | ATF-551M4-TR2 |
4
ATF-551M4 Typical Performance Curves
Notes:
1. Measurements at 900MHz were made using an ICM fixture with a double stub tuner at the input tuned for low noise and a double stub tuner at the
output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
3. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached, the
drain current may increase or point. At lower values of Idsq, the device is running close to class B as power output approaches P1dB. This results in
higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with
active biasing. As an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15 mA as a P1dB of +14.5 dBm is approached.
Figure 6. Gain vs. I
ds
and V
ds
at 900 MHz
[1]
.
I
ds
(
m
A)
G
0
35
15
5
30
25
20
10
26
25
24
23
22
21
20
19
18
2V
2.7V
3V
Figure 7. F
m
in vs. I
ds
and V
ds
at 900 MHz
[2]
.
I
ds
(
m
A)
F
m
i
0
35
15
5
30
25
20
10
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
2V
2.7V
3V
Figure 9. IIP3 vs. I
ds
and V
ds
at 900 MHz
[1]
.
I
ds
(
m
A)
I
m
)
0
35
15
5
30
25
20
10
7
6
5
4
3
2
1
0
-1
-2
2V
2.7V
3V
Figure 10. P1dB vs. I
dq
and V
ds
at 900 MHz
[1]
.
I
dq
(
m
A)
P
m
)
0
35
15
5
30
25
20
10
18
17
16
15
14
13
12
11
10
9
2V
2.7V
3V
Figure 8. OIP3 vs. I
ds
and V
ds
at 900 MHz
[1]
.
I
ds
(
m
A)
O
m
)
0
35
15
5
30
25
20
10
32
30
28
26
24
22
20
18
16
2V
2.7V
3V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-58143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-58143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-58143-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
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