參數資料
型號： ATF-551M4-TR2
英文描述： Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package
中文描述： 低噪聲增強模式偽HEMT器件的微型無鉛封裝
文件頁數： 15/24頁
文件大?。?/td> 198K
代理商： ATF-551M4-TR2
15
ATF-551M4 Typical Scattering Parameters,
V
DS
= 3V, I
DS
= 15 mA
Freq.
GHz
S
11
S
21
Mag.
S
12
Mag.
S
22
Mag.
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
Ang.
Ang.
0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.995
0.949
0.894
0.882
0.813
0.768
0.758
0.717
0.690
0.668
0.666
0.668
0.670
0.672
0.681
0.678
0.684
0.690
0.707
0.744
0.751
0.807
0.824
0.874
-6.5
-31.2
-54.1
-59.4
-84.0
-101.2
-105.1
-123.1
-138.7
-163.5
177.5
164.4
152.3
142.4
131.7
118.6
105.8
91.8
81.3
66.6
55.2
45.3
37.3
31.1
22.02
21.51
20.79
20.59
19.41
18.38
18.14
16.90
15.74
13.68
11.93
10.53
9.31
8.32
7.43
6.62
5.89
5.19
4.44
3.75
2.93
1.97
1.01
0.02
12.623
11.900
10.958
10.701
9.341
8.301
8.068
6.996
6.120
4.829
3.947
3.363
2.921
2.607
2.351
2.142
1.970
1.817
1.667
1.540
1.401
1.254
1.123
1.002
175.6
156.9
142.3
138.9
123.3
112.7
110.3
99.2
89.7
73.6
59.9
48.5
37.5
27.0
16.4
5.3
-5.5
-16.8
-27.6
-39.5
-50.7
-61.4
-71.9
-82.0
0.005
0.025
0.041
0.045
0.059
0.066
0.067
0.073
0.076
0.080
0.082
0.084
0.087
0.092
0.098
0.104
0.113
0.122
0.132
0.142
0.151
0.157
0.163
0.167
86.0
71.0
60.1
57.6
46.7
39.7
38.1
31.6
26.7
20.0
15.8
14.2
12.9
11.8
10.4
7.8
4.9
0.7
-3.7
-10.0
-16.4
-22.8
-29.5
-36.2
0.802
0.754
0.700
0.682
0.599
0.537
0.522
0.459
0.407
0.334
0.286
0.250
0.232
0.218
0.209
0.209
0.215
0.226
0.221
0.211
0.218
0.236
0.277
0.330
-3.1
-14.6
-25.4
-27.8
-38.1
-44.5
-45.9
-52.0
-56.9
-65.0
-73.3
-78.4
-87.6
-97.7
-110.0
-122.9
-135.4
-147.1
-160.3
-179.5
159.7
137.8
114.5
95.0
34.02
26.78
24.27
23.76
22.00
21.00
20.81
19.82
19.06
17.81
16.82
16.02
14.96
12.99
12.01
10.90
10.28
9.70
9.23
9.62
8.26
9.02
8.38
7.78
Freq
GHz
F
min
dB
Γ
opt
Mag.
Γ
opt
Ang.
R
n/50
G
a
dB
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.18
0.19
0.23
0.39
0.35
0.42
0.49
0.56
0.66
0.83
0.84
0.94
1.05
1.19
1.40
0.63
0.56
0.51
0.46
0.44
0.39
0.31
0.27
0.29
0.33
0.33
0.35
0.40
0.46
0.44
-6.3
6.8
10.0
36.5
40.8
50.1
72.5
104.4
146.9
167.4
169.0
-166.9
-152.7
-138.6
-121.9
0.12
0.12
0.11
0.10
0.10
0.10
0.08
0.07
0.06
0.05
0.05
0.06
0.07
0.09
0.16
24.41
22.45
22.29
18.75
18.61
17.46
16.42
14.80
13.48
12.58
12.38
11.49
10.77
10.23
9.32
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
Typical Noise Parameters,
V
DS
= 3V, I
DS
= 15 mA
40
30
20
10
0
-10
Figure 33. MSG/MAG and |S
21
|
2
vs.
Frequency at 3V, 15 mA.
FREQUENCY (GHz)
0
20
10
5
15
M
2
|
2
|S
21
|
2
MAG
MSG
MSG
相關PDF資料
PDF描述
ATF10100 0.5-12 GHz Low Noise Gallium Arsenide FET(0.5-12 GHz 低噪聲砷化鎵 FET)
ATF10135 TRANSISTOR | JFET | N-CHANNEL | SOT-173VAR
ATF10170 TRANSISTOR | JFET | N-CHANNEL | 70MA I(DSS) | MICRO-X
ATF10235 TRANSISTOR | JFET | N-CHANNEL | SOT-173VAR
ATF13036 TRANSISTOR | JFET | N-CHANNEL | 40MA I(DSS) | MICRO-X
相關代理商/技術參數
參數描述
ATF-58143 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-58143-BLK 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-58143-BLKG 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
ATF-58143-BLKG 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
ATF-58143-TR1 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
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