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參數(shù)資料
| 型號(hào)： | APTC80H29SCT |
| 廠(chǎng)商： | Advanced Power Technology Ltd. |
| 英文描述： | Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module |
| 中文描述： | 全-橋系列 |
| 文件頁(yè)數(shù)： | 6/7頁(yè) |
| 文件大小： | 327K |
| 代理商： | APTC80H29SCT |
APTC80H29SCT
A
APT website – http://www.advancedpower.com
6 – 7
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
5
10
I
D
, Drain Current (A)
15
20
25
t
V
DS
=533V
R
G
=5
T
J
=125°C
L=100μH
Rise and Fall times vs Current
t
r
t
f
0
10
20
30
40
50
5
10
I
D
, Drain Current (A)
15
20
25
t
r
f
V
DS
=533V
R
G
=5
T
J
=125°C
L=100μH
Switching Energy vs Current
E
on
E
off
0
100
200
300
400
500
5
10
I
D
, Drain Current (A)
15
20
25
E
V
DS
=533V
R
G
=5
T
J
=125°C
L=100μH
E
on
E
off
0
250
500
750
1000
1250
0
10
Gate Resistance (Ohms)
20
30
40
50
S
Switching Energy vs Gate Resistance
V
DS
=533V
I
D
=15A
T
J
=125°C
L=100μH
0
50
100
150
200
250
300
350
4
6
8
10
12
14
I
D
, Drain Current (A)
F
Operating Frequency vs Drain Current
V
DS
=533V
D=50%
R
G
=5
T
J
=125°C
T
J
=25°C
T
J
=150°C
1
10
100
1000
0.2
0.6
1
1.4
1.8
V
SD
, Source to Drain Voltage (V)
I
D
,
Source to Drain Diode Forward Voltage
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTC80H29SCTG | 功能描述:MOSFET PWR MOD FULL BRIDGE SP4 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC80H29T1G | 功能描述:MOSFET PWR MOD FULL BRIDGE SP1 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC80H29T3 | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APTC80H29T3G | 功能描述:MOSFET PWR MOD FULL BRIDGE SP3 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC80SK15T1G | 功能描述:MOSFET N-CH 800V 28A SP1 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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