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參數(shù)資料
| 型號： | APTC80H29SCT |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module |
| 中文描述： | 全-橋系列 |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 327K |
| 代理商： | APTC80H29SCT |
APTC80H29SCT
A
APT website – http://www.advancedpower.com
5 – 7
0.90
0.95
1.00
1.05
1.10
1.15
-50
0
50
100
150
T
J
, Junction Temperature (°C)
B
D
,
V
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50
0
50
100
150
T
J
, Junction Temperature (°C)
R
D
(
(
V
GS
=10V
I
D
= 7.5A
Threshold Voltage vs Temperature
0.7
0.8
0.9
1.0
1.1
1.2
-50
0
50
100
150
T
C
, Case Temperature (°C)
V
G
(
(
Maximum Safe Operating Area
100ms
10ms
1ms
100μs
0
1
10
100
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
I
D
,
limited by
R
DSon
Single pulse
T
J
=150°C
Ciss
Crss
Coss
10
100
1000
10000
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
C
Capacitance vs Drain to Source Voltage
V
DS
=160V
V
DS
=400V
V
DS
=640V
0
2
4
6
8
10
12
14
16
0
20
40
60
80
100
Gate Charge (nC)
Gate Charge vs Gate to Source Voltage
V
G
,
I
D
=15A
T
J
=25°C
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