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參數(shù)資料
| 型號： | APTC80H29SCT |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module |
| 中文描述： | 全-橋系列 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 327K |
| 代理商： | APTC80H29SCT |
APTC80H29SCT
A
APT website – http://www.advancedpower.com
2 – 7
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
DSS
Drain - Source Breakdown Voltage
Test Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
= 0V,V
DS
= 800V
V
GS
= 0V,V
DS
= 800V
V
GS
= 10V, I
D
= 7.5A
V
GS
= V
DS
, I
D
= 1mA
V
GS
= ±20
V, V
DS
= 0V
Min
800
2.1
Typ
3
Max
25
250
290
3.9
±100
Unit
V
T
j
= 25°C
T
j
= 125°C
I
DSS
Zero Gate Voltage Drain Current
μA
R
DS(on)
V
GS(th)
I
GSS
Dynamic Characteristics
Symbol Characteristic
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Q
g
Total gate Charge
Q
gs
Gate – Source Charge
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
m
V
nA
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
Min
Typ
2254
1046
54
91
Max
Unit
pF
12
Q
gd
Gate – Drain Charge
V
GS
= 10V
V
Bus
= 400V
I
D
= 15A
46
nC
T
d(on)
T
r
T
d(off)
T
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
10
13
83
35
Inductive switching @125°C
V
GS
= 15V
V
Bus
= 533V
I
D
= 15A
R
G
= 5
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 533V
I
D
= 15A,
R
G
= 5
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 533V
I
D
= 15A,
R
G
= 5
ns
E
on
Turn-on Switching Energy
146
E
off
Turn-off Switching Energy
139
μJ
E
on
Turn-on Switching Energy
255
E
off
Turn-off Switching Energy
171
μJ
Series diode ratings and characteristics
Symbol Characteristic
I
F(AV)
Maximum Average Forward Current
Test Conditions
50% duty cycle
I
F
= 30A
I
F
= 60A
I
F
= 30A
I
F
= 30A
V
R
= 133V
di/dt = 200A/μs
I
F
= 30A
V
R
= 133V
di/dt = 200A/μs
Min
Typ
30
1.1
1.4
0.9
Max
1.15
Unit
A
T
c
= 85°C
V
F
Diode Forward Voltage
T
j
= 125°C
V
T
j
= 25°C
24
t
rr
Reverse Recovery Time
T
j
= 125°C
T
j
= 25°C
48
ns
33
Q
rr
Reverse Recovery Charge
T
j
= 125°C
150
nC
In accordance with JEDEC standard JESD24-1.
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