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參數(shù)資料
| 型號： | APTC80H29SCT |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module |
| 中文描述： | 全-橋系列 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 327K |
| 代理商： | APTC80H29SCT |
APTC80H29SCT
A
APT website – http://www.advancedpower.com
4 – 7
Typical CoolMOS Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.00001
0.0001
0.001
0.01
0.1
1
rectangular Pulse Duration (Seconds)
T
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4V
4.5V
5V
5.5V
6V
6.5V
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
V
DS
, Drain to Source Voltage (V)
I
D
,
V
GS
=15&10V
Low Voltage Output Characteristics
Transfert Characteristics
T
J
=-55°C
T
J
=25°C
T
J
=125°C
0
10
20
30
40
50
0
1
V
GS
, Gate to Source Voltage (V)
2
3
4
5
6
7
8
I
D
,
V
DS
> I
D
(on)xRDS(on)MAX
250μs pulse test @ < 0.5 duty cycle
R
DS(on)
vs Drain Current
V
GS
=10V
V
GS
=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0
5
10
15
20
25
30
I
D
, Drain Current (A)
R
D
(
Normalized to
V
GS
=10V @ 7.5A
0
2
4
6
8
10
12
14
16
25
50
75
100
125
150
T
C
, Case Temperature (°C)
I
D
,
DC Drain Current vs Case Temperature
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參數(shù)描述 |
|---|---|
| APTC80H29SCTG | 功能描述:MOSFET PWR MOD FULL BRIDGE SP4 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC80H29T1G | 功能描述:MOSFET PWR MOD FULL BRIDGE SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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| APTC80H29T3G | 功能描述:MOSFET PWR MOD FULL BRIDGE SP3 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC80SK15T1G | 功能描述:MOSFET N-CH 800V 28A SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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