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參數(shù)資料
| 型號： | APTC80H29SCT |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module |
| 中文描述： | 全-橋系列 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 327K |
| 代理商： | APTC80H29SCT |
APTC80H29SCT
A
APT website – http://www.advancedpower.com
3 – 7
Parallel diode ratings and characteristics
Symbol Characteristic
I
F(AV)
Maximum Average Forward Current
Test Conditions
50% duty cycle
Min
Typ
5
1.6
2.6
Max
1.8
3.0
Unit
A
Tc = 125°C
T
j
= 25°C
T
j
= 175°C
V
F
Diode Forward Voltage
I
F
= 5A
V
Q
C
Total Capacitive Charge
I
F
= 5A, V
R
= 600V
di/dt =500A/μs
14
nC
f = 1MHz, V
R
= 200V
f = 1MHz, V
R
= 400V
45
33
Q
Total Capacitance
pF
Thermal and package characteristics
Symbol Characteristic
Min
2500
-40
-40
-40
Typ
Max
0.8
1.2
2.5
150
125
100
4.7
160
Unit
Transistor
Series diode
Parallel diode
R
thJC
Junction to Case
°C/W
V
ISOL
T
J
T
STG
T
C
Torque Mounting torque
Wt
Package Weight
Temperature sensor NTC
Symbol Characteristic
R
25
Resistance @ 25°C
B
25/85
T
25
= 298.16 K
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
V
°C
To Heatsink
M5
N.m
g
Min
Typ
68
4080
Max
Unit
k
K
T
T
B
R
R
T
1
1
exp
25
85
/
25
25
Package outline
T: Thermistor temperature
R
T
: Thermistor value at T
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
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