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參數(shù)資料
| 型號： | AM45DL3208GB70IS |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | 存儲(chǔ)器 |
| 英文描述： | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA73 |
| 封裝： | 8 X 11.60 MM, FBGA-73 |
| 文件頁數(shù)： | 31/66頁 |
| 文件大小： | 1196K |
| 代理商： | AM45DL3208GB70IS |
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March 12, 2004
Am45DL3208G
29
P R E L I M I N A R Y
Figure 4.
Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algo-
rithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any con-
trols or timings during these operations. Tables
15
and
16
show the address and data requirements for the
chip erase command sequence.
When the Embedded Erase algorithm is complete,
that bank returns to the read mode and addresses are
no longer latched. The system can determine the sta-
tus of the erase operation by using DQ7, DQ6, DQ2,
or RY/BY#. Refer to the Flash Write Operation Status
section for information on these status bits.
Any commands written during the chip erase operation
are ignored. However, note that a
hardware reset
im-
mediately terminates the erase operation. If that oc-
curs, the chip erase command sequence should be
reinitiated once that bank has returned to reading
array data, to ensure data integrity. Note that the
SecSi Sector, autoselect, and CFI functions are un-
available when an erase operation in is progress.
Figure 5
illustrates the algorithm for the erase opera-
tion. Refer to the Flash Erase and Program Operations
tables in the AC Characteristics section for parame-
ters, and
Figure 21
section for timing diagrams.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two ad-
ditional unlock cycles are written, and are then fol-
lowed by the address of the sector to be erased, and
the sector erase command. Tables
15
and
16
show the
address and data requirements for the sector erase
command sequence.
The device does notrequire the system to preprogram
prior to erase. The Embedded Erase algorithm auto-
matically programs and verifies the entire memory for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or tim-
ings during these operations.
After the command sequence is written, a sector erase
time-out of 80 μs occurs. During the time-out period,
additional sector addresses and sector erase com-
mands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sec-
tors may be from one sector to all sectors. The time
between these additional cycles must be less than 80
μs, otherwise erasure may begin. Any sector erase ad-
dress and command following the exceeded time-out
may or may not be accepted. It is recommended that
processor interrupts be disabled during this time to en-
sure all commands are accepted. The interrupts can
be re-enabled after the last Sector Erase command is
written.
Any command other than Sector Erase or
Erase Suspend during the time-out period resets
that bank to the read mode.
The system must rewrite
the command sequence and any additional addresses
and commands. Note that the SecSi Sector, autose-
lect, and CFI functions are unavailable when an erase
operation in is progress.
The system can monitor DQ3 to determine if the sec-
tor erase timer has timed out (See the section on DQ3:
Sector Erase Timer.). The time-out begins from the ris-
ing edge of the final WE# pulse in the command
sequence.
When the Embedded Erase algorithm is complete, the
bank returns to reading array data and addresses are
START
Write Program
Command Sequence
Data Poll
from System
Verify Data
No
Yes
Last Address
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
Note:
See Tables
15
and
16
for program command
sequence.
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| AM45DL3208GB70IT | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM45DL3208GB85IS | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM45DL3208GB85IT | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM45DL3208GT70IS | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM45DL3208GT70IT | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM45DL3208GB70IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM45DL3208GB85IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM45DL3208GB85IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM45DL3208GT70IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM45DL3208GT70IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
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