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參數(shù)資料
| 型號(hào)： | Am29LV800B-90R |
| 廠(chǎng)商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
| 中文描述： | 8兆位（1,048,576 x 8-Bit/524，288 x 16位），3.0伏的CMOS只，扇區(qū)閃存 |
| 文件頁(yè)數(shù)： | 42/48頁(yè) |
| 文件大?。?/td> | 207K |
| 代理商： | AM29LV800B-90R |
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42
Am29LV800T/Am29LV800B
P R E L I M I N A R Y
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. The typical program and erase times are considerably less than the maximum times since most words/bytes program or erase
significantly faster than the worst case word/byte. The device enters the failure mode (DQ5=“1”) only after the maximum times
given are exceeded. See the section on DQ5 for further information.
2. Except for erase and program endurance, the typical program and erase times assume the following conditions: 25
°
C, 3.0 V
V
CC
, 100,000 cycles. Additionally, programming typicals assume checkerboard pattern.
3. Under worst case conditions of 90C, V
CC
= 2.7 V 100,000 cycles.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle sequence for the program command. See Table 6
for further information on command definitions.
LATCHUP CHARACTERISTICS
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V one pin at a time.
PIN CAPACITANCE, 48-PIN TSOP
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25
°
C, f = 1.0 MHz.
Parameter
Typ (Note 2)
Max (Note 3)
Unit
Comments
Sector Erase Time
1
15
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
19
s
Byte Programming Time
9
300
μ
s
Excludes system level
overhead (Note 5)
Word Programming Time
11
360
μ
s
Chip Programming Time
Byte Mode
9
27
s
Word Mode
5.8
17
s
Erase/Program Endurance
1,000,000
cycles
Minimum 100,000 cycles
guaranteed
Min
Max
Input Voltage with respect to V
SS
on all pins except I/O pins (Including A9 and OE)
–1.0 V
13.0 V
Input Voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
Current
–100 mA
+100 mA
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
8
10
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29LV800T-120 | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
| Am29LV800T-150 | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
| Am29LV800T-90R | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
| AM29LV800T | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
| Am29LV800T-100 | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV800BB | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV800BB120EC | 制造商:AMD 功能描述:* |
| AM29LV800BB-120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV800BB-120EI | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 16, 48 Pin, Plastic, TSSOP |
| AM29LV800BB-90DPI\\1 | 制造商:Spansion 功能描述:AM29LV800BB-90DPI\\1 - Gel-pak, waffle pack, wafer, diced wafer on film |
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