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參數(shù)資料
| 型號(hào)： | Am29LV800B-90R |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
| 中文描述： | 8兆位（1,048,576 x 8-Bit/524，288 x 16位），3.0伏的CMOS只，扇區(qū)閃存 |
| 文件頁數(shù)： | 41/48頁 |
| 文件大?。?/td> | 207K |
| 代理商： | AM29LV800B-90R |
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Am29LV800T/Am29LV800B
41
P R E L I M I N A R Y
SWITCHING WAVEFORMS
Notes:
1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ7 is the complement of the data written to the device.
4. D
OUT
is the data written to the device.
Figure indicates last two bus cycles of four bus cycle sequence
Figure 27.
Alternate CE Controlled Write Operation Timings
t
GHWL
t
WS
OE
CE
WE
V
CC
t
DS
Data
t
AH
ADDRESSES
t
DH
t
CP
PD
DQ7
D
OUT
t
WHWH1_or_2
t
WC
t
AS
t
CPH
t
VCS
555h
PA
PA
Data Polling
A0h
20478D-33
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29LV800T-120 | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
| Am29LV800T-150 | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
| Am29LV800T-90R | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
| AM29LV800T | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
| Am29LV800T-100 | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV800BB | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV800BB120EC | 制造商:AMD 功能描述:* |
| AM29LV800BB-120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV800BB-120EI | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 16, 48 Pin, Plastic, TSSOP |
| AM29LV800BB-90DPI\\1 | 制造商:Spansion 功能描述:AM29LV800BB-90DPI\\1 - Gel-pak, waffle pack, wafer, diced wafer on film |
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