參數(shù)資料
型號(hào)： Am29LV800B-90R
廠商： Advanced Micro Devices, Inc.
英文描述： 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory
中文描述： 8兆位（1,048,576 x 8-Bit/524，288 x 16位），3.0伏的CMOS只，扇區(qū)閃存
文件頁(yè)數(shù)： 21/48頁(yè)
文件大?。?/td> 207K
代理商： AM29LV800B-90R
Am29LV800T/Am29LV800B
21
P R E L I M I N A R Y
RESET: Hardware Reset Pin
The RESET pin is an active low signal. A logic ‘0’ on this
pin will force the device out of any mode that is currently
executing back to the reset state. This allows a system
reset to take effect immediately without having to wait for
the device to finish a long execution cycle. To avoid a po-
tential bus contention during a system reset, the device
is isolated from the data I/O bus by tri-stating the data
output pins for the duration of the RESET pulse.
If RESET is asserted during a program or erase oper-
ation, the RY/BY pin will remain low until the reset op-
eration is internally complete. This will require between
1
μ
s and 20
μ
s. Hence the RY/BY pin can be used to
signal that the reset operation is complete. Otherwise,
allow for the maximum reset time of 20
μ
s. If RESET is
asserted when a program or erase operation is not ex-
ecuting (RY/BY pin is high), the reset operation will be
complete within 500 ns.
Asserting RESET during a program or erase operation
leaves erroneous data stored in the address locations
being operated on at the time of device reset. These lo-
cations need updating after the reset operation is com-
plete. See Figure 4 for timing specifications.
The device enters I
CC4
standby mode (200 nA) when
V
SS
±
0.3 V is applied to the RESET pin. The device can
enter this mode at any time, regardless of the logical
condition of the CE pin. Furthermore, entering I
CC4
during a program or erase operation leaves erroneous
data in the address locations being operated on at the
time of the RESET pulse. These locations need updat-
ing after the device resumes standard operations. After
the RESET pin goes high, a minimum latency period of
50 ns must occur before a valid read can take place.
RESET
RY/BY
t
RL
20 μs max
20478D-10
Figure 3.
Device Reset During a Program or Erase Operation
0 V
RY/BY
RESET
t
RL
20478D-11
Figure 4.
Device Reset During Read Mode
相關(guān)PDF資料
PDF描述
Am29LV800T-120 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory
Am29LV800T-150 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory
Am29LV800T-90R 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory
AM29LV800T 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory
Am29LV800T-100 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV800BB 制造商:Advanced Micro Devices 功能描述:
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AM29LV800BB-120EC 制造商:Advanced Micro Devices 功能描述:
AM29LV800BB-120EI 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 16, 48 Pin, Plastic, TSSOP
AM29LV800BB-90DPI\\1 制造商:Spansion 功能描述:AM29LV800BB-90DPI\\1 - Gel-pak, waffle pack, wafer, diced wafer on film
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