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參數(shù)資料
| 型號： | Am29LV800B-90R |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
| 中文描述： | 8兆位（1,048,576 x 8-Bit/524，288 x 16位），3.0伏的CMOS只，扇區(qū)閃存 |
| 文件頁數(shù)： | 18/48頁 |
| 文件大?。?/td> | 207K |
| 代理商： | AM29LV800B-90R |
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18
Am29LV800T/Am29LV800B
P R E L I M I N A R Y
Write Operation Status
Address Sensitivity of Write Status Flags
Detailed in Table 7 are all the status flags that can be
used to check the status of the device for current mode
operation. During Sector Erase, the part provides the
status flags automatically to the I/O ports. The informa-
tion on DQ2 is address sensitive. This means that if an
address from an erasing sector is consecutively read,
then the DQ2 bit will toggle. However, DQ2 will not tog-
gle if an address from a non-erasing sector is consec-
utively read. This allows the user to determine which
sectors are erasing and which are not.
Once Erase Suspend is entered, address sensitivity
still applies. If the address of a non-erasing sector (that
is, one available for read) is provided, then stored data
can be read from the device. If the address of an eras-
ing sector (that is, one unavailable for read) is applied,
the device will output its status bits. Confirmation of sta-
tus bits can be done by doing consecutive reads to tog-
gle DQ2, which is active throughout the Embedded
Erase mode, including Erase Suspend.
In order to effectively use DATA Polling to determine if
the device has entered into erase-suspended mode, it
is necessary to apply a sector address from a sector
being erased.
Table 7.
Hardware Sequence Flags
Notes:
1. DQ2 can be toggled when the sector address applied is that of an erasing or erase suspended sector. Conversely, DQ2 cannot
be toggled when the sector address applied is that of a non-erasing or non-erase suspended sector. DQ2 is therefore used
to determine which sectors are erasing or erase suspended and which are not.
2. These status flags apply when outputs are read from the address of a non-erase-suspended sector.
3. If DQ5 is high (exceeded timing limits), successive reads from a problem sector will cause DQ2 to toggle.
DQ7: Data Polling
The Am29LV800 features DATA Polling as a method to
indicate to the host system that the embedded algo-
rithms are in progress or completed.
During the Embedded Program Algorithm, an attempt
to read the device will produce the compliment of the
data last written to DQ7. Upon completion of the Em-
bedded Program Algorithm, an attempt to read the de-
vice will produce the true data last written to DQ7. Note
that just at the instant when DQ7 switches to true data,
the other bits, DQ6–DQ0, may not yet be true data.
However, they will all be true data on the next read from
the device.
Please note that Data Polling (DQ7) may
give an inaccurate result when an attempt is made
to write to a protected sector.
During an Embedded
Erase Algorithm, an attempt to read the device will pro-
duce a ‘0’ at the DQ7 output. Upon completion of the
Embedded Erase Algorithm, an attempt to read the de-
vice will produce a ‘1’ at DQ7.
For chip erase, the DATA Polling is valid (DQ7 = 1) after
the rising edge of the sixth WE pulse in the six write
pulse sequence. For sector erase, the DATA Polling is
valid after the last rising edge of the sector erase WE
pulse. DATA Polling must be performed at sector ad-
dresses within any of the sectors being erased and not
a sector that is within a protected sector. Otherwise, the
status may not be valid.
Just prior to the completion of Embedded Algorithm op-
erations, DQ7 may change asynchronously while the
output enable (OE) is asserted low. This means that the
Status
DQ6
DQ5
DQ3
DQ2
RY/BY
In Progress
Byte and Word Programming
DQ7
Toggle
0
0
No Toggle
0
Program/Erase in Auto-Erase
0
Toggle
0
1
(Note 1)
0
Erase
Suspend
Mode
Erase Sector Address
1
No Toggle
0
0
Toggle
(Note 1)
1
Non-Erase Sector Address
Data
Data
Data
Data
Data
(Note 2)
1
Program in Erase Suspend
DQ7
(Note 2)
Toggle
0
0
1
(Note 2)
0
Exceeded
Time Limits
Byte and Word Programming
DQ7
Toggle
1
0
No Toggle
0
Program/Erase in Auto-Erase
0
Toggle
1
1
(Note 3)
0
Program in Erase Suspend
DQ7
Toggle
1
0
No Toggle
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29LV800T-120 | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
| Am29LV800T-150 | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
| Am29LV800T-90R | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
| AM29LV800T | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
| Am29LV800T-100 | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV800BB | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV800BB120EC | 制造商:AMD 功能描述:* |
| AM29LV800BB-120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV800BB-120EI | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 16, 48 Pin, Plastic, TSSOP |
| AM29LV800BB-90DPI\\1 | 制造商:Spansion 功能描述:AM29LV800BB-90DPI\\1 - Gel-pak, waffle pack, wafer, diced wafer on film |
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