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參數(shù)資料
| 型號(hào)： | AM29BDS640GTD4WSI |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 4M X 16 FLASH 1.8V PROM, 14 ns, PBGA80 |
| 封裝： | 11 X 12 MM, 0.80 MM PITCH, FBGA-80 |
| 文件頁數(shù)： | 58/65頁 |
| 文件大?。?/td> | 899K |
| 代理商： | AM29BDS640GTD4WSI |
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60
Am29BDS640G
October 31, 2002
AD V A NCE
INF O R M A T IO N
AC CHARACTERISTICS
Note: Breakpoints in waveforms indicate that system may alternately read array data from the “non-busy bank” while checking
the status of the program or erase operation in the “busy” bank. The system should read status twice to ensure valid information.
Figure 33.
Back-to-Back Read/Write Cycle Timings
OE#
CE#
WE#
tOEH
Data
Addresses
AVD#
PD/30h
AAh
RA
PA/SA
tWC
tDS
tDH
tRC
tOE
tAS
tAH
tACC
tOEH
tWP
tGHWL
tOEZ
tWC
tSR/W
Last Cycle in
Program or
Sector Erase
Command Sequence
Read status (at least two cycles) in same bank
and/or array data from other bank
Begin another
write or program
command sequence
RD
RA
555h
RD
tWPH
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