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參數(shù)資料
| 型號： | AM29BDS640GTD4WSI |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 4M X 16 FLASH 1.8V PROM, 14 ns, PBGA80 |
| 封裝： | 11 X 12 MM, 0.80 MM PITCH, FBGA-80 |
| 文件頁數(shù)： | 50/65頁 |
| 文件大?。?/td> | 899K |
| 代理商： | AM29BDS640GTD4WSI |
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October 31, 2002
Am29BDS640G
53
AD V A NCE
INF O R M A T IO N
AC CHARACTERISTICS
Figure 25.
Chip/Sector Erase Command Sequence
Notes:
1. SA is the sector address for Sector Erase.
2. Address bits A21–A12 are don’t cares during unlock cycles in the command sequence.
OE#
CE#
Data
Addresses
AVD#
WE#
CLK
VCC
tAS
tWP
tAH
tWC
tWPH
SA
tVCS
tCS
tDH
tCH
In
Progress
tWHWH2
VA
Complete
VA
Erase Command Sequence (last two cycles)
Read Status Data
tDS
10h for
chip erase
555h for
chip erase
VIH
VIL
tAVDP
55h
2AAh
30h
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