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參數(shù)資料
| 型號： | AM29BDS640GTD4WSI |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 4M X 16 FLASH 1.8V PROM, 14 ns, PBGA80 |
| 封裝： | 11 X 12 MM, 0.80 MM PITCH, FBGA-80 |
| 文件頁數(shù)： | 35/65頁 |
| 文件大?。?/td> | 899K |
| 代理商： | AM29BDS640GTD4WSI |
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October 31, 2002
Am29BDS640G
39
AD V A NCE
INF O R M A T IO N
AC CHARACTERISTICS
Notes:
1. Figure shows total number of wait states set to seven cycles. The total number of wait states can be programmed from two
cycles to seven cycles.
2. If any burst address occurs at a 64-word boundary, one additional clock cycle is inserted, and is indicated by RDY.
3. The device is in synchronous mode.
Figure 11.
CLK Synchronous Burst Mode Read
(rising active CLK)
Da
Da + 1
Da + n
OE#
DQ15-DQ0
A21-A0
Aa
AVD#
RDY
CLK
CE#
tCES
tACS
tAVC
tAVD
tACH
tOE
tRACC
tOEZ
tCEZ
tIACC
tACC
tBDH
7 cycles for initial access shown.
Hi-Z
1
2
34
56
7
tRDYS
tBACC
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