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參數(shù)資料
| 型號(hào)： | A3PN125-2VQ100 |
| 元件分類： | FPGA |
| 英文描述： | FPGA, 3072 CLBS, 125000 GATES, PQFP100 |
| 封裝： | 14 X 14 MM, 1.20 MM HEIGHT, 0.50 MM PITCH, VQFP-100 |
| 文件頁數(shù)： | 4/106頁 |
| 文件大?。?/td> | 3324K |
| 代理商： | A3PN125-2VQ100 |
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R e visio n 8
4 -1
4 – Datasheet Information
List of Changes
The following table lists critical changes that were made in the current version of the ProASIC3 nano
datasheet.
Revision
Changes
Page
Revision 8
(April 2010)
References to differential inputs were removed from the datasheet, since
ProASIC3 nano devices do not support differential inputs (SAR 21449).
N/A
The "ProASIC3 nano Device Status" table is new.
The JTAG DC voltage was revised in Table 2-2 Recommended Operating
Conditions 1, 2 (SAR 24052). The maximum value for VPUMP programming
voltage (operation mode) was changed from 3.45 V to 3.6 V (SAR 25220).
The highest temperature in Table 2-6 Temperature and Voltage Derating Factors
for Timing Delays was changed to 100C.
The typical value for A3PN010 was revised in Table 2-7 Quiescent Supply
Current Characteristics. The note was revised to remove the statement that
values do not include I/O static contribution.
The following tables were updated with available information:
through
Table 2-22 I/O Weak Pull-Up/Pull-Down Resistances was revised to add wide
range data and correct the formulas in the table notes (SAR 21348).
The text introducing Table 2-24 Duration of Short Circuit Event before Failure
was revised to state six months at 100° instead of three months at 110° for
reliability concerns. The row for 110° was removed from the table.
revised to give values with Schmitt trigger disabled and enabled (SAR 24634).
The temperature for reliability was changed to 100C.
LVCMOS Wide Range and the timing tables in the "Single-Ended I/O
Characteristics" section were updated with available information. The timing
tables for 3.3 V LVCMOS wide range are new.
The following sentence was deleted from the "2.5 V LVCMOS" section: "It uses a
5 V–tolerant input buffer and push-pull output buffer."
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| A3PN125-2VQG100I | FPGA, 3072 CLBS, 125000 GATES, PQFP100 |
| A3PN125-2VQG100 | FPGA, 3072 CLBS, 125000 GATES, PQFP100 |
| A3PN125-VQ100I | FPGA, 3072 CLBS, 125000 GATES, PQFP100 |
| A3PN125-VQ100 | FPGA, 3072 CLBS, 125000 GATES, PQFP100 |
| A3PN125-VQG100I | FPGA, 3072 CLBS, 125000 GATES, PQFP100 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| A3PN125-2VQ100I | 功能描述:IC FPGA NANO 125K GATES 100-VQFP RoHS:否 類別:集成電路 (IC) >> 嵌入式 - FPGA（現(xiàn)場(chǎng)可編程門陣列） 系列:ProASIC3 nano 標(biāo)準(zhǔn)包裝:152 系列:IGLOO PLUS LAB/CLB數(shù):- 邏輯元件/單元數(shù):792 RAM 位總計(jì):- 輸入/輸出數(shù):120 門數(shù):30000 電源電壓:1.14 V ~ 1.575 V 安裝類型:表面貼裝 工作溫度:-40°C ~ 85°C 封裝/外殼:289-TFBGA，CSBGA 供應(yīng)商設(shè)備封裝:289-CSP（14x14） |
| A3PN125-2VQG100 | 功能描述:IC FPGA NANO 125K GATES 100-VQFP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - FPGA（現(xiàn)場(chǎng)可編程門陣列） 系列:ProASIC3 nano 標(biāo)準(zhǔn)包裝:152 系列:IGLOO PLUS LAB/CLB數(shù):- 邏輯元件/單元數(shù):792 RAM 位總計(jì):- 輸入/輸出數(shù):120 門數(shù):30000 電源電壓:1.14 V ~ 1.575 V 安裝類型:表面貼裝 工作溫度:-40°C ~ 85°C 封裝/外殼:289-TFBGA，CSBGA 供應(yīng)商設(shè)備封裝:289-CSP（14x14） |
| A3PN125-2VQG100I | 功能描述:IC FPGA NANO 125K GATES 100-VQFP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - FPGA（現(xiàn)場(chǎng)可編程門陣列） 系列:ProASIC3 nano 標(biāo)準(zhǔn)包裝:152 系列:IGLOO PLUS LAB/CLB數(shù):- 邏輯元件/單元數(shù):792 RAM 位總計(jì):- 輸入/輸出數(shù):120 門數(shù):30000 電源電壓:1.14 V ~ 1.575 V 安裝類型:表面貼裝 工作溫度:-40°C ~ 85°C 封裝/外殼:289-TFBGA，CSBGA 供應(yīng)商設(shè)備封裝:289-CSP（14x14） |
| A3PN125-DIELOT | 制造商:Microsemi Corporation 功能描述:A3PN125-DIELOT - Gel-pak, waffle pack, wafer, diced wafer on film |
| A3PN125-VQ100 | 功能描述:IC FPGA NANO 125K GATES 100-VQFP RoHS:否 類別:集成電路 (IC) >> 嵌入式 - FPGA（現(xiàn)場(chǎng)可編程門陣列） 系列:ProASIC3 nano 標(biāo)準(zhǔn)包裝:152 系列:IGLOO PLUS LAB/CLB數(shù):- 邏輯元件/單元數(shù):792 RAM 位總計(jì):- 輸入/輸出數(shù):120 門數(shù):30000 電源電壓:1.14 V ~ 1.575 V 安裝類型:表面貼裝 工作溫度:-40°C ~ 85°C 封裝/外殼:289-TFBGA，CSBGA 供應(yīng)商設(shè)備封裝:289-CSP（14x14） |
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