參數(shù)資料
型號： 9S12H256BDGV1
英文描述： 9S12H256B Device Guide
中文描述： 9S12H256B設備指南
文件頁數(shù)： 97/130頁
文件大?。?/td> 2171K
代理商： 9S12H256BDGV1
97
A.1.10 Supply Currents
This section describes the current consumption characteristics of the device as well as the conditions for
the measurements.
A.1.10.1 Measurement Conditions
All measurements are without output loads. Unless otherwise noted the currents are measured in single
chip mode, internal voltage regulator enabled and at 16MHz bus frequency using a 4MHz oscillator in
Colpitts mode. Production testing is performed using a square wave signal at the EXTAL input.
A.1.10.2 Additional Remarks
Inexpandedmodesthecurrentsflowinginthesystemarehighlydependentontheloadattheaddress,data
and control signals as well as on the duty cycle of those signals. No generally applicable numbers can be
17
T
Injection current
3
Single Pin limit
Total Device Limit. Sum of all injected currents
I
ICS
I
ICP
–2.5
–25
–
2.5
25
mA
18
P Port H, J Interrupt Input Pulse filtered
4
t
PULSE
3
μ
s
19
P Port H, J Interrupt Input Pulse passed
4
t
PULSE
10
μ
s
NOTES
:
1. Maximum leakage current occurs at maximum operating temperature. Current decreases by approximately one-half for
each 8 C to 12 C in the temperature range from 50 C to 125 C.
2. Maximum leakage current occurs at maximum operating temperature. Current decreases by approximately one-half for
each 8 C to 12 C in the temperature range from 50 C to 125 C.
3. Refer to
Section A.1.4 Current Injection
, for more details
4. Parameter only applies in STOP or Pseudo STOP mode.
Table A-6 5V I/O Characteristics
Conditions are shown in
Table A-4
unless otherwise noted
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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