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參數(shù)資料
型號: 9S12H256BDGV1
英文描述: 9S12H256B Device Guide
中文描述: 9S12H256B設(shè)備指南
文件頁數(shù): 105/130頁
文件大?。?/td> 2171K
代理商: 9S12H256BDGV1
105
The failure rates for data retention and program/erase cycling are specified at the operating conditions
noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
Table A-12 NVM Reliability Characteristics
Conditions are shown in
Table A-4
unless otherwise noted
NOTE:
Flash cycling performance is 10 cycles at -40C to +125C. Data retention is
specified for 15 years.
NOTE:
EEPROM cycling performance is 10K cycles at -40C to 125C. Data retention is
specified for 5 years on words after cycling 10K times. However if only 10 cycles
are executed on a word the data retention is specified for 15 years.
Num C
Rating
Cycles
Data Retention
Lifetime
Unit
1
C Flash/EEPROM (-40C to +125C)
10
15
Years
2
C EEPROM (-40C to +125C)
10,000
5
Years
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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