參數(shù)資料
型號(hào): 73S1217F-68M/F/PE
廠商: Maxim Integrated
文件頁(yè)數(shù): 44/140頁(yè)
文件大?。?/td> 0K
描述: IC SOC SMART CARD READER 68QFN
標(biāo)準(zhǔn)包裝: 260
系列: *
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)當(dāng)前第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)第101頁(yè)第102頁(yè)第103頁(yè)第104頁(yè)第105頁(yè)第106頁(yè)第107頁(yè)第108頁(yè)第109頁(yè)第110頁(yè)第111頁(yè)第112頁(yè)第113頁(yè)第114頁(yè)第115頁(yè)第116頁(yè)第117頁(yè)第118頁(yè)第119頁(yè)第120頁(yè)第121頁(yè)第122頁(yè)第123頁(yè)第124頁(yè)第125頁(yè)第126頁(yè)第127頁(yè)第128頁(yè)第129頁(yè)第130頁(yè)第131頁(yè)第132頁(yè)第133頁(yè)第134頁(yè)第135頁(yè)第136頁(yè)第137頁(yè)第138頁(yè)第139頁(yè)第140頁(yè)
73S1217F Data Sheet
DS_1217F_002
138
Rev. 1.2
Revision History
Revision
Date
Description
1.0
5/15/2007
First publication.
1.1
11/7/2007
On page 2, changed bullet from “ISO-7816 UART 9600 to 115kbps for
protocols T=0, T=1” to “ISO-7816 UART for protocols T=0, T=1”.
In Table 1, removed NC, pin 44 row.
In Section 1.4, changed description to remove pre-boot and 32-cycle
references.
In Section 1.4, changed the second bullet “Page zero of flash memory, the
preferred location for the user’s preboot code, may not be page-erased by
either MPT or ICE. Page zero may only be erased with global flash erase.
Note that global flash erase erases XRAM whether the SECURE bit is set
or not.” to “Page zero of flash memory may not be page-erased by either
MPU or ICE. Page zero may only be erased with global flash erase. Note
that global flash erase erases XRAM whether the SECURE bit is set or
not.”
In Section 1.7.1, changed “Mcount is configured in the MCLKCtl register
must be bound between a value of 1 to 7. The possible crystal or external
clock are shown in Table 12.“ to “Mcount is configured in the MCLKCtl
register must be bound between a value of 1 to 7. The possible crystal or
external clock frequencies for getting MCLK = 96MHz are shown in Table
11.”
In Section 1.7.4, added “Depending on the state of the ON/OFF circuitry
and power applied to the VBUS input, the 73S1217F will go into either
standby mode or power “OFF” mode. If system power is provided by,
VBUS or the ON/OFF circuitry is in the “ON” state, the MPU core will
placed into standby mode.”
In the BRCON description, changed “If BSEL = 1, the baud rate is derived
using timer 1.” to “If BSEL = 0, the baud rate is derived using timer 1.”
In Section 1.7.15, removed the following from the emulator port
description: “The signals of the emulator port have weak pull-ups. Adding
resistor footprints for signals E_RST, E_TCLK and E_RXTX on the PCB is
recommended. If necessary, adding 10K
Ω pull-up resistors on E_TCLK
and E_RXTX and a 3K
Ω on E_RST will help the emulator operate
normally if a problem arises.”
In Section 1.7.17.1, added 230000 to the baud rate selections in bullet 7.
In the VccCtl description, added “The VDDFLT bit (if enabled) will provide
an emergency deactivation of the internal smart card slot. See the VDD
Fault Detect Function section for more detail.”
Changed last sentence of the DETTS bit description from “TS is decoded
prior to the FIFO and is stored in the receive FIFO,” to “TS is decoded
before being stored in the receive FIFO.”
In Ordering Information, removed the leaded part numbers.
1.2
12/16/2008
In Table 1, added more description to the VCC, VPC, VDD, SCL, SDA,
SEC, TEST and PRES pins.
In Section 1.3.2, changed “FLSH_ERASE” to “ERASE” and
“FLSH_PGADR” to “PGADDR”. Added “The PGADDR register denotes
the page address for page erase. The page size is 512 (200h) bytes and
there are 128 pages within the flash memory. The PGADDR denotes the
upper seven bits of the flash memory address such that bit 7:1 of the
PGADDR corresponds to bit 15:9 of the flash memory address. Bit 0 of
the PGADDR is not used and is ignored.” In the description of the
相關(guān)PDF資料
PDF描述
73S1210F-68M/F/PH IC SOC SMART CARD READER 68QFN
73S1210F-68M/F/PG IC SOC SMART CARD READER 68QFN
73S1210F-68MR/F/PH IC SOC SMART CARD READER 68QFN
FQD1N80TM MOSFET N-CH 800V 1A DPAK
73S1210F-68MR/F/PG IC SOC SMART CARD READER 68QFN
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
73S1217F-68MR/F/PE 功能描述:8位微控制器 -MCU RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
73S1217F-EB 功能描述:開(kāi)發(fā)板和工具包 - 8051 73S1217F Eval Brd (Usb Cable, Doc. Cd) RoHS:否 制造商:Silicon Labs 產(chǎn)品:Development Kits 工具用于評(píng)估:C8051F960, Si7005 核心: 接口類型:USB 工作電源電壓:
73S1217F-EB-Lite 功能描述:開(kāi)發(fā)板和工具包 - 8051 73S1217F EVB Lite w/Plug & Play/Usb RoHS:否 制造商:Silicon Labs 產(chǎn)品:Development Kits 工具用于評(píng)估:C8051F960, Si7005 核心: 接口類型:USB 工作電源電壓:
73S1217F-IMR/F 制造商:TERIDIAN 制造商全稱:TERIDIAN 功能描述:Bus-Powered 80515 System-on-Chip with USB, ISO 7816 / EMV, PINpad and More
73S13B 制造商:QUARTZCOM 制造商全稱:QUARTZCOM the communications company 功能描述:-20 ~ +70 °C commercia l application -30 ~ +75 °C on request