參數(shù)資料
型號(hào)： 73M1966B-DB
廠商： Maxim Integrated Products
文件頁(yè)數(shù)： 25/88頁(yè)
文件大小： 0K
描述： BOARD DEMO 73M1966B 20-TSSOP
產(chǎn)品培訓(xùn)模塊： Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝： 1
系列： *
DS_1x66B_001
73M1866B/73M1966B Data Sheet
Rev. 1.6
31
4.3
Over-Voltage and EMI Protection
Over-voltage protection is required to meet worst-case conditions for target countries. UL1950,
EN60950, IEC 60950, ITU-T K.20/K.21 and GR-1089-CORE specifications define the protection
requirements for many countries. A single design can be implemented to meet all these requirements.
Figure 14 shows a recommended protection circuit topology. Fuse (F1) should be rated appropriately for
the country of operation, and the bidirectional thyristor (E1) should have a minimum break-over of 220 V,
a maximum break-over of 275 V and be able to survive a 100 A fast transient. In addition to over-voltage
and current protection, the 73M1x66B should make provisions to prevent EMI emissions and EMC
susceptibility. Figure 14 also illustrates how L1, L2, C35, C36 and C41can provide this suppression. The
ferrite beads, L1 and L2,
should be capable of passing 150 mA and have an impedance of 2K Ω at 100
MHz. C35, C36 and C41 should be between 47pF and 220nF, and rated for a breakdown voltage greater
than the highest isolation voltage or line voltage that is required for country compatibility. C35 and C36
should be returned to an earth ground. EMI suppression is highly dependent on the physical design of
the overall circuit and not all the suppression components may be needed in every design and
application.
C35
220pF, 3kV
C36
220pF, 3kV
L1
2K Ohm @ 100MHz
F1
TR600-150
L2
2K Ohm @ 100MHz
J1
RJ-11
1
2
3
4
5
6
E1
P3100SBRP
or equiv .
T
R
C41
220pF, 300V
Figure 14: Suggested Over-Voltage Protection and EMI Suppression Circuit
Table 28: Reference Bill of Materials for Figure 14
Reference
Part Description
Source
Example MFR P/N
E1
Bidirectional Thyristor
Diodes Inc., Bourns
TB3100H-13-H,
TISP4290T3BJR-S
F1
PPTC Fuse
Tyco, Bourns
MF-R015/600 or equiv.
L1,L2
2 KΩ @ 100 MHz, 150 mA min, 0805
Steward, TDK
MPZ2012S601A
C35, C36
220 pF, 3000 V
TDK
C4532COG3F221K
C41
220 pF, 300 V
Vishay
VJ1206Y221KXEAT5Z
相關(guān)PDF資料
PDF描述
EEM18DTBT-S189 CONN EDGECARD 36POS R/A .156 SLD
EEM18DTAT-S189 CONN EDGECARD 36POS R/A .156 SLD
383LX822M100N062 CAP ALUM 8200UF 100V 20% SNAP
73M1866B-IFX KIT EVALUATION FOR 73M1866B
GMM08DSEN-S13 CONN EDGECARD 16POS .156 EXTEND
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
73M1966B-DB-C 功能描述:網(wǎng)絡(luò)開(kāi)發(fā)工具 73M1966B Demo Brd w/GUI Cable RoHS:否 制造商:Rabbit Semiconductor 產(chǎn)品:Development Kits 類型:Ethernet to Wi-Fi Bridges 工具用于評(píng)估:RCM6600W 數(shù)據(jù)速率:20 Mbps, 40 Mbps 接口類型:802.11 b/g, Ethernet 工作電源電壓:3.3 V
73M1966B-EVM 功能描述:網(wǎng)絡(luò)開(kāi)發(fā)工具 73M1966 Demo Brd & MotherBrd RoHS:否 制造商:Rabbit Semiconductor 產(chǎn)品:Development Kits 類型:Ethernet to Wi-Fi Bridges 工具用于評(píng)估:RCM6600W 數(shù)據(jù)速率:20 Mbps, 40 Mbps 接口類型:802.11 b/g, Ethernet 工作電源電壓:3.3 V
73M1966B-IM/F 制造商:Maxim Integrated Products 功能描述:
73M1966B-KEYCHN 功能描述:網(wǎng)絡(luò)開(kāi)發(fā)工具 Keychain Eval Module RoHS:否 制造商:Rabbit Semiconductor 產(chǎn)品:Development Kits 類型:Ethernet to Wi-Fi Bridges 工具用于評(píng)估:RCM6600W 數(shù)據(jù)速率:20 Mbps, 40 Mbps 接口類型:802.11 b/g, Ethernet 工作電源電壓:3.3 V
73M1AR0015F 功能描述:RES 0.0015 OHM 1% 1W 1206 制造商:cts resistor products 系列:73M1A 包裝:帶卷（TR） 零件狀態(tài):在售 電阻值:1.5 MOhms 容差:±1% 功率（W）:1W 成分:金屬薄膜 特性:電流檢測(cè) 溫度系數(shù):±100ppm/°C 工作溫度:-55°C ~ 155°C 封裝/外殼:1206（3216 公制） 供應(yīng)商器件封裝:1206 大小/尺寸:0.126" 長(zhǎng) x 0.063" 寬（3.20mm x 1.60mm） 高度 - 安裝（最大值）:0.035"（0.90mm） 端子數(shù):2 故障率:- 標(biāo)準(zhǔn)包裝:4,000
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*