參數(shù)資料
型號(hào): 71V67703S75BQ
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: SRAM
英文描述: 256K X 36 CACHE SRAM, 7.5 ns, PBGA165
封裝: 13 X 15 MM, 1.2 MM HEIGHT, 1 MM PITCH, FBGA-165
文件頁數(shù): 5/23頁
文件大?。?/td> 515K
代理商: 71V67703S75BQ
6.42
13
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
NOTES:
1
.
O1
(Ax)
represents
the
first
output
from
the
external
address
Ax.
O1
(Ay)
represents
the
first
output
from
the
external
addr
ess
Ay;
O2
(Ay)
represents
the
next
output
data
in
the
burst
sequence
of
the
base
address
Ay,
etc.
where
A0
and
A1
are
advancing
for
the
four
word
burst
in
the
sequence
defined
by
the
state
of
the
LBO
input.
2
.
ZZ
input
is
LOW
and
LBO
is
Don't
Care
for
this
cycle.
3.
C
S
0timing
transitions
are
identical
but
inverted
to
the
CE
and
CS
1
signals.
For
example,
when
CE
and
CS
1are
LOW
on
this
waveform,
CS
0is
HIGH.
Timing Waveform of Flow-Through Read Cycle (1,2)
tC
H
Z
tS
A
tS
C
tH
S
G
W
,
B
W
E
,
B
W
x
tS
W
tC
L
tS
A
V
tH
W
tH
A
V
C
LK
A
D
S
P
A
D
S
C
(1
)
A
D
R
E
S
tC
Y
C
tC
H
tH
A
tH
C
tO
E
tO
H
Z
O
E
tC
D
tO
LZ
O
1(
A
x)
D
A
T
A
O
U
T
tC
D
C
O
1(
A
y)
O
2(
A
y)
O
2(
A
y)
A
D
V
C
E
,
C
S
1
(N
ot
e
3)
F
lo
w
-t
h
rou
gh
R
ea
d
B
u
rst
F
lo
w
-t
hr
ou
gh
R
ea
d
O
ut
pu
t
D
isa
b
le
d
A
x
A
y
tS
S
O
1(
A
y)
O
4(
A
y)
O
3(
A
y)
(B
u
rst
w
raps
a
roun
d
to
it
s
in
it
ia
l
st
a
te
)
5
30
9
d
rw
0
6
A
D
V
H
IG
H
su
sp
e
n
d
s
burs
t
,
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