參數(shù)資料
型號: 70V659S10DR
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: SRAM
英文描述: 128K X 36 DUAL-PORT SRAM, 10 ns, PQFP208
封裝: 28 X 28 MM, 3.50 MM HEIGHT, PLASTIC, QFP-208
文件頁數(shù): 15/24頁
文件大小: 316K
代理商: 70V659S10DR
IDT70V659/58/57S
High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
22
JTAG AC Electrical
Characteristics(1,2,3,4)
Symbol
Parameter
Min.
Max.
Units
tJCYC
JTAG Clock Input Period
100
____
ns
tJCH
JTAG Clock HIGH
40
____
ns
tJCL
JTAG Clock Low
40
____
ns
tJR
JTAG Clock Rise Time
____
3(1)
ns
tJF
JTAG Clock Fall Time
____
3(1)
ns
tJRST
JTAG Reset
50
____
ns
tJRSR
JTAG Reset Recovery
50
____
ns
tJCD
JTAG Data Output
____
25
ns
tJDC
JTAG Data Output Hold
0
____
ns
tJS
JTAG Setup
15
____
ns
tJH
JTAG Hold
15
____
ns
4869 tbl 19
NOTES:
1. Guaranteed by design.
2. 30pF loading on external output signals.
3. Refer to AC Electrical Test Conditions stated earlier in this document.
4. JTAG operations occur at one speed (10MHz). The base device may run at
any speed specified in this datasheet.
JTAG Timing Specifications
TCK
Device Inputs(1)/
TDI/TMS
Device Outputs(2)/
TDO
TRST
tJCD
tJDC
tJRST
tJS
tJH
tJCYC
tJRSR
tJF
tJCL
tJR
tJCH
4869 drw 20
x
NOTES:
1. Device inputs = All device inputs except TDI, TMS, and TRST.
2. Device outputs = All device outputs except TDO.
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