參數(shù)資料
型號： 2SK1317
廠商： Hitachi,Ltd.
英文描述： Silicon N-Channel MOS FET
中文描述： 硅N溝道場效應(yīng)晶體管
文件頁數(shù)： 2/8頁
文件大小： 48K
代理商： 2SK1317
2SK1317
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
1500
V
Gate to source voltage
±
20
V
Drain current
2.5
A
Drain peak current
7
A
Body to drain diode reverse drain current
2.5
A
Channel dissipation
100
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value at T
C
= 25
°
C
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
1500
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source leak current
I
GSS
—
—
±
1
μ
A
μ
A
V
GS
=
±
20 V, V
DS
= 0
V
DS
= 1200 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 2 A, V
GS
= 15 V *
1
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
500
V
GS(off)
R
DS(on)
2.0
—
4.0
V
Static drain to source on state
resistance
—
9
12
Forward transfer admittance
|yfs|
0.45
0.75
—
S
I
D
= 1 A, V
DS
= 20 V *
1
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
Input capacitance
Ciss
—
990
—
pF
Output capacitance
Coss
—
125
—
pF
Reverse transfer capacitance
Crss
—
60
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
17
—
ns
I
D
= 2 A, V
GS
= 10 V,
R
L
= 15
Rise time
—
70
—
ns
Turn-off delay time
—
110
—
ns
Fall time
—
60
—
ns
Body to drain diode forward
voltage
—
0.9
—
V
I
F
= 2 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note:
1. Pulse test
t
rr
—
1750
—
ns
I
F
= 2 A, V
= 0,
di
F
/dt = 100 A/
μ
s
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK1317-01-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(3+Tab) TO-3P 制造商:Renesas Electronics Corporation 功能描述:2SK1317-01-E - Rail/Tube
2SK1317E 制造商:Renesas Electronics 功能描述:Bulk 制造商:Renesas 功能描述:Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(3+Tab) TO-3P
2SK1317-E 制造商:Renesas Electronics Corporation 功能描述:2SK1317-E - Rail/Tube 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(3+Tab) TO-3P Tray 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 1500V 2.5A TO-3P 制造商:Renesas Electronics Corporation 功能描述:MOSFET N TO-3P 制造商:Renesas Electronics Corporation 功能描述:MOSFET, N, TO-3P 制造商:Renesas Electronics Corporation 功能描述:N CHANNEL MOSFET, 1.5KV, 2.5A TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:1.5kV; On Resistance Rds(on):12ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,1500V,2.5A,9ohm,TO-3P
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