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參數(shù)資料
| 型號： | 2SJ673 |
| 元件分類： | JFETs |
| 英文描述： | 36 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, MP-45F, 3 PIN |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 282K |
| 代理商： | 2SJ673 |
Data Sheet D17210EJ1V0DS
2
2SJ673
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS =
60 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS = m20 V, VDS = 0 V
m10
A
Gate Cut-off Voltage
VGS(off)
VDS =
10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
Note
| yfs |
VDS =
10 V, ID = 18 A
22
S
Drain to Source On-state Resistance
Note
RDS(on)1
VGS =
10 V, ID = 18 A
17
20
m
RDS(on)2
VGS =
4.0 V, ID = 18 A
22
31
m
Input Capacitance
Ciss
VDS =
10 V
4600
pF
Output Capacitance
Coss
VGS = 0 V
820
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
330
pF
Turn-on Delay Time
td(on)
VDD =
30 V, ID = 18 A
14
ns
Rise Time
tr
VGS =
10 V
14
ns
Turn-off Delay Time
td(off)
RG = 0
130
ns
Fall Time
tf
50
ns
Total Gate Charge
QG
VDD =
48 V
87
nC
Gate to Source Charge
QGS
VGS =
10 V
15
nC
Gate to Drain Charge
QGD
ID =
36 A
22
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF =
36 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF =
36 A, VGS = 0 V
52
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
84
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
L
VDD
VGS =
20 → 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS()
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
VDS
Wave Form
VGS()
10%
90%
VGS
10%
0
VDS()
90%
td(on)
tr
td(off)
tf
10%
τ
VDS
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG =
2 mA
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