- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33476 > 2SJ680 2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | 2SJ680 |
| 元件分類： | JFETs |
| 英文描述： | 2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-7J2B, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 211K |
| 代理商： | 2SJ680 |
2SJ680
2004-12-24
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOS V)
2SJ680
Switching Applications
Chopper Regulator, DC/DC Converter and
Motor Drive Applications
Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.)
High forward transfer admittance: |Yfs| = 2.0 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 200 V)
Enhancement model: Vth = 1.5 ~ 3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
200
V
Drain-gate voltage (RGS = 20 k)
VDGR
200
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
2.5
Drain current
Pulse
(Note 1)
IDP
10
A
Drain power dissipation (Tc
= 25°C)
PD
20
W
Single pulse avalanche energy
(Note 2)
EAS
97.5
mJ
Avalanche current
IAR
2.5
A
Repetitive avalanche energy (Note 3)
EAR
2.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
6.25
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
125
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 25.2 mH, IAR = 2.5 A RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
０．６±０．１５
０．８ MAX．
２．
３±
０．
２
１２３
１．1 MAX．
０．６±０．１５
０．６ MAX
０．６ MAX．
１．１±０．２
６．５±０．２
５．
５±
０．
２
１．
５±
０．
２
２．３
５．
７
５．２±０．２
０．９
４．
１
±
０．
２
１．
６
相關PDF資料 |
PDF描述 |
|---|---|
| 2SJ687 | 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SJ687-ZK-E2-AY | 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SJ687-ZK-E1-AY | 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SJ687-ZK-E2-AY | 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK0601G | 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ680(Q) | 制造商:Toshiba 功能描述:Pch -200V -2.5A 2.0@10V New PW-Mold2 Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Pch ,V=200V,I=2.5A,PW-Mold2 制造商:Toshiba 功能描述:Trans MOSFET P-CH 200V 2.5A 3-Pin(3+Tab) PW-Mold2 |
| 2SJ680_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon P-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications |
| 2SJ680_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Applications |
| 2SJ681 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII) |
| 2SJ681(Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 60V 5A PW-MOLD 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Nch ,Vdss=60V,Id=5A,PW-Mold2 |
發(fā)布緊急采購，3分鐘左右您將得到回復。