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參數(shù)資料
| 型號： | 2SJ687-ZK-E2-AY |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封裝： | LEAD FREE, MP-3ZK, TO-252, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 161K |
| 代理商： | 2SJ687-ZK-E2-AY |
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MOS FIELD EFFECT TRANSISTOR
2SJ687
SWITCHING
P-CHANNEL POWER MOSFET
DATA SHEET
Document No. D18719EJ2V0DS00 (2nd edition)
Date Published May 2007 NS
Printed in Japan
2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage.
FEATURES
Low on-state resistance
RDS(on)1 = 7.0 m
Ω MAX. (VGS = 4.5 V, ID = 10 A)
RDS(on)2 = 9.0 m
Ω MAX. (VGS = 3.0 V, ID = 10 A)
RDS(on)3 = 20 m
Ω MAX. (VGS = 2.5 V, ID = 10 A)
2.5 V drive available
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SJ687-ZK-E1-AY
Note
2SJ687-ZK-E2-AY
Note
Pure Sn (Tin)
Tape 2500 p/reel
TO-252 (MP-3ZK)
0.27 g TYP.
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m12
V
Drain Current (DC) (TC = 25
°C)
ID(DC)
m20
A
Drain Current (pulse)
Note1
ID(pulse)
m60
A
Total Power Dissipation (TC = 25
°C)
PT1
36
W
Total Power Dissipation (TA = 25
°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
20
A
Single Avalanche Energy
Note2
EAS
40
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25
°C, VDD = 10 V, RG = 25 Ω, VGS = 12 → 0 V
(TO-252)
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| 2SJ73 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | P-CHANNEL | DUAL | 5MA I(DSS) |
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| 2SJ74-BL | 功能描述:JFET X34 Pb Small Signal Trans RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
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