參數(shù)資料
型號: 2SJ673
元件分類: JFETs
英文描述: 36 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, MP-45F, 3 PIN
文件頁數(shù): 4/10頁
文件大?。?/td> 282K
代理商: 2SJ673
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MOS FIELD EFFECT TRANSISTOR
2SJ673
SWITCHING
P-CHANNEL POWER MOS FET
DATA SHEET
Document No. D17210EJ1V0DS00 (1st edition)
Date Published June 2004 NS CP(K)
Printed in Japan
2004
DESCRIPTION
The 2SJ673 is P-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance
RDS(on)1 = 20 m
MAX. (VGS = 10 V, ID = 18 A)
RDS(on)2 = 31 m
MAX. (VGS = 4.0 V, ID = 18 A)
Low Ciss: Ciss = 4600 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
m36
A
Drain Current (pulse)
Note1
ID(pulse)
m144
A
Total Power Dissipation (TC = 25°C)
PT1
32
W
Total Power Dissipation (TA = 25°C)
PT2
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
36
A
Single Avalanche Energy
Note2
EAS
130
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD =
30 V, RG = 25 , VGS = 20 → 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ673
Isolated TO-220 (MP-45F)
(Isolated TO-220)
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