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參數(shù)資料
| 型號： | 2SJ669 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-8M1B, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 231K |
| 代理商： | 2SJ669 |
2SJ669
2004-08-18
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
A
Drain cutoff current
IDSS
VDS = 60 V, VGS = 0 V
—
100
A
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
—
V
Drainsource breakdown voltage
V (BR) DSX
ID = 10 mA, VGS = 20 V
35
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
—
2.0
V
VGS = 4 V, ID = 2.5 A
—
0.16
0.25
Drainsource ON-resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
—
0.12
0.17
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
2.5
5.0
—
S
Input capacitance
Ciss
—
700
—
Reverse transfer capacitance
Crss
—
60
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
90
—
pF
Rise time
tr
—
14
—
Turnon time
ton
—
24
—
Fall time
tf
—
14
—
Switching time
Turnoff time
toff
—
95
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
15
—
Gatesource charge
Qgs
—
11
—
Gatedrain (“Miller”) charge
Qgd
VDD ≈ 48 V, VGS = 10 V, ID = 5 A
—
4
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
5
A
Pulse drain reverse current
(Note 1)
IDRP
—
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
40
—
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V
dlDR / dt = 50 A / S
—
32
—
nC
Marking
Duty <= 1%, tw = 10 s
10 V
0 V
VGS
RL =
12
VDD 30 V
ID = 2.5 A
Output
4.
7
J669
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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