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參數(shù)資料
| 型號： | 2SJ567 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (ヰ-MOSV) |
| 中文描述： | 東芝場效應(yīng)晶體管硅P通道馬鞍山類型（ヰ- MOSV） |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 237K |
| 代理商： | 2SJ567 |
2SJ567
2002-08-12
2
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
16 V, V
DS
0 V
10
A
Drain cut-off current
I
DSS
V
DS
200 V, V
GS
0 V
100
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
10 mA, V
GS
0 V
200
V
Gate threshold voltage
V
th
V
DS
10 V, I
D
1 mA
1.5
3.5
V
Drain-source ON resistance
R
DS (ON)
V
GS
10 V, I
D
1.5 A
1.6
2.0
Forward transfer admittance
Y
fs
V
DS
10 V, I
D
1.5 A
1.0
2.0
S
Input capacitance
C
iss
410
Reverse transfer capacitance
C
rss
40
Output capacitance
C
oss
V
DS
10 V, V
GS
0 V, f 1 MHz
145
pF
Rise time
t
r
20
Turn-on time
t
on
45
Fall time
t
f
15
Switching time
Turn-off time
t
off
85
ns
Total gate charge
(Gate source plus gate-drain)
Q
g
10
Gate-source charge
Q
gs
6
Gate-drain (“Miller”) charge
Q
gd
V
DD
I
D
2.5 A
160 V, V
GS
10 V,
4
nC
Source-Drain Ratings and Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
I
DR
2.5
A
Pulse drain reverse current
(Note 1)
I
DRP
10
A
Forward voltage (diode)
V
DSF
I
DR
2.5 A, V
GS
0 V
2.0
V
Reverse recovery time
t
rr
135
ns
Reverse recovery charge
Q
rr
I
DR
2.5 A, V
GS
0 V,
dI
DR
/dt 100 A/ s
0.81
C
Marking
※
Type
J567
※
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Duty
1%, t
w
10 s
10 V
0
V
V
GS
R
L
66.7
V
DD
100 V
I
D
1.5
A
V
OUT
5
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| 2SJ567(TE16L1,NQ) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 200V 2.5A PW-MOLD 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-ch 200V 2.5A 20W New PW-Mold |
| 2SJ567_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon P-Channel MOS Type Switching Applications |
| 2SJ567_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV) |
| 2SJ569LS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ56H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-3 |
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