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參數(shù)資料
| 型號： | 2SJ619 |
| 廠商： | Toshiba Corporation |
| 英文描述： | ZD-3.6V- 1 W |
| 中文描述： | 東芝場效應晶體管硅P通道馬鞍山類型（L2MOSV） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 220K |
| 代理商： | 2SJ619 |
2SJ619
2002-08-09
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L
2
- -MOS
V
)
2SJ619
Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
4-V gate drive
Low drain-source ON resistance: R
DS (ON)
= 0.15 (typ.)
High forward transfer admittance: Y
fs
= 7.7 S (typ.)
Low leakage current: I
DSS
= 100 μA (max) (V
DS
= 100 V)
Enhancement-model: V
th
= 0.8 to 2.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
100
V
Drain-gate voltage (R
GS
20 k )
V
DGR
100
V
Gate-source voltage
V
GSS
20
V
DC
(Note 1)
I
D
16
Drain current
Pulse
(Note 1)
I
DP
64
A
Drain power dissipation (Tc 25°C)
P
D
75
W
Single pulse avalanche energy
(Note 2)
E
AS
292
mJ
Avalanche current
I
AR
16
A
Repetitive avalanche energy (Note 3)
E
AR
7.5
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
1.67
°C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: V
DD
25 V, T
ch
25°C (initial), L 1.84 mH, R
G
25 ,
I
AR
16 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Circuit Configuration
1
3
4
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