參數(shù)資料
型號： 28F640J3C-120
廠商： Intel Corp.
英文描述： Intel StrataFlash Memory (J3)
中文描述： 英特爾StrataFlash存儲器（J3）
文件頁數(shù)： 27/72頁
文件大?。?/td> 905K
代理商： 28F640J3C-120
256-Mbit J3 (x8/x16)
Datasheet
27
7.3
Block Erase, Program, and Lock-Bit Configuration
Performance
Table 10. Configuration Performance
#
Sym
Parameter
Typ
Max
(8)
Unit
Notes
W16
Write Buffer Byte Program Time
(Time to Program 32 bytes/16 words)
218
654
μs
1,2,3,4,5,6,7
W16
t
WHQV3
t
EHQV3
Byte Program Time (Using Word/Byte Program Command)
210
630
μs
1,2,3,4
Block Program Time (Using Write to Buffer Command)
0.8
2.4
sec
1,2,3,4
W16
t
WHQV4
t
EHQV4
Block Erase Time
1.0
5.0
sec
1,2,3,4
W16
t
WHQV5
t
EHQV5
Set Lock-Bit Time
64
75/85
μs
1,2,3,4,9
W16
t
WHQV6
t
EHQV6
Clear Block Lock-Bits Time
0.5
0.70/1.4
sec
1,2,3,4,10
W16
t
WHRH1
t
EHRH1
Program Suspend Latency Time to Read
25
75/90
μs
1,2,3,9
W16
t
WHRH
t
EHRH
Erase Suspend Latency Time to Read
26
35/40
μs
1,2,3,9
NOTES:
1. Typical values measured at T
A
= +25 °C and nominal voltages. Assumes corresponding lock-bits are
not set. Subject to change based on device characterization.
2. These performance numbers are valid for all speed versions.
3. Sampled but not 100% tested.
4. Excludes system-level overhead.
5. These values are valid when the buffer is full, and the start address is aligned on a 32-byte boundary.
6. Effective per-byte program time (t
WHQV1
, t
EHQV1
) is 6.8 μs/byte (typical).
7. Effective per-word program time (t
WHQV2
, t
EHQV2
) is 13.6 μs/word (typical).
8. Max values are measured at worst case temperature and V
CC
corner after 100k cycles (except as
noted).
9. Max values are expressed at -25 °C/-40 °C.
10.Max values are expressed at 25 °C/-40 °C.
相關(guān)PDF資料
PDF描述
28LV64A 64K (8K x 8) Low Voltage CMOS EEPROM(低壓,64K位, CMOS 并行EEPROM)
28M0U 60V 300mA MONOLITHIC DIODE ARRAY
28M0DC 60V 300mA MONOLITHIC DIODE ARRAY
28M0DS 60V 300mA MONOLITHIC DIODE ARRAY
28M0UC 60V 300mA MONOLITHIC DIODE ARRAY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F640J3D75 制造商:Intel 功能描述: 制造商: 功能描述: 制造商:undefined 功能描述:
28F640J5 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:5 Volt Intel StrataFlash? Memory
28F640L18 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash Wireless Memory
28F640L30 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel StrataFlash㈢ Wireless Memory with 3.0-Volt I/O (L30)
28F640P3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*