參數(shù)資料
型號： 28F640J3C-120
廠商： Intel Corp.
英文描述： Intel StrataFlash Memory (J3)
中文描述： 英特爾StrataFlash存儲器（J3）
文件頁數(shù)： 18/72頁
文件大小： 905K
代理商： 28F640J3C-120
256-Mbit J3 (x8/x16)
18
Datasheet
5.0
Maximum Ratings and Operating Conditions
5.1
Absolute Maximum Ratings
This datasheet contains information on new products in production. The specifications are subject
to change without notice. Verify with your local Intel Sales office that you have the latest datasheet
before finalizing a design. Absolute maximum ratings are shown in
Table 4
.
Warning:
Stressing the device beyond the “Absolute Maximum Ratings”
may cause permanent damage
.
These are stress ratings only. Operation beyond the “Operating Conditions” is not recommended
and extended exposure beyond the “Operating Conditions” may affect device reliability.
5.2
Operating Conditions
Table 4. Absolute Maximum Ratings
Parameter
Maximum Rating
Temperature under Bias Extended
–40 °C to +85 °C
Storage Temperature
–65 °C to +125 °C
Voltage On Any signal
–2.0 V to +5.0 V
(1)
Output Short Circuit Current
100 mA
(2)
NOTES:
1. All specified voltages are with respect to GND. Minimum DC voltage is –0.5 V on input/output signals and
–0.2 V on V
and V
signals. During transitions, this level may undershoot to –2.0 V for periods <20
ns. Maximum DC voltage on input/output signals, V
CC
, and V
PEN
is V
CC
+0.5 V which, during transitions,
may overshoot to V
+2.0 V for periods <20 ns.
2. Output shorted for no more than one second. No more than one output shorted at a time.
Table 5. Temperature and V
CC
Operating Conditions
Symbol
Parameter
Min
Max
Unit
Test Condition
T
A
Operating Temperature
–40
+85
°C
Ambient Temperature
V
CC
V
CC1
Supply Voltage (2.7 V
3.6 V)
V
CCQ
Supply Voltage (2.7 V
3.6 V)
2.70
3.60
V
—
V
CCQ
2.70
3.60
V
—
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