參數(shù)資料
型號(hào)： 28F016SC
英文描述： Evaluation Kit/Evaluation System for the MAX5954L/MAX5954A
中文描述： 28F016SC -字節(jié)寬SmartVoltage FlashFile Memory系列4。 8。及16兆比特
文件頁數(shù)： 9/59頁
文件大?。?/td> 384K
代理商： 28F016SC
E
3 VOLT ADVANCED+ BOOT BLOCK
9
PRODUCT PREVIEW
Table 2. 3 Volt Advanced+ Boot Block Pin Descriptions
Symbol
Type
Name and Function
A
0
–A
21
INPUT
ADDRESS INPUTS
for memory addresses. Addresses are internally
latched during a program or erase cycle.
8-Mbit x 8 A[0-19], 16-Mbit x 8 A[0-20], 32-Mbit x 8 A[0-21]
8-Mbit x 16 A[0-18], 16-Mbit x 16 A[0-19], 32-Mbit x 16 A[0-20]
DATA INPUTS/OUTPUTS:
Inputs array data on the second CE# and
WE# cycle during a Program command. Inputs commands to the
Command User Interface when CE# and WE# are active. Data is
internally latched. Outputs array, configuration and status register data.
The data pins float to tri-state when the chip is de-selected or the outputs
are disabled.
DQ
0
–DQ
7
INPUT/OUTPUT
DQ
8
–DQ
15
INPUT/OUTPUT
DATA INPUTS/OUTPUTS:
Inputs array data on the second CE# and
WE# cycle during a Program command. Data is internally latched.
Outputs array and configuration data. The data pins float to tri-state when
the chip is de-selected.
Not included on x8 products.
CE#
INPUT
CHIP ENABLE:
Activates the internal control logic, input buffers,
decoders and sense amplifiers. CE# is active low. CE# high de-selects
the memory device and reduces power consumption to standby levels.
OE#
INPUT
OUTPUT ENABLE:
Enables the device’s outputs through the data
buffers during a read operation. OE# is active low.
WE#
INPUT
WRITE ENABLE:
Controls writes to the Command Register and
memory array. WE# is active low. Addresses and data are latched on
the rising edge of the second WE# pulse.
RP#
INPUT
RESET/DEEP POWER-DOWN:
Uses two voltage levels (V
IL
, V
IH
) to
control reset/deep power-down mode.
When RP# is at logic low, the device is in reset/deep power-down
mode
, which drives the outputs to High-Z, resets the Write State
Machine, and minimizes current levels (I
CCD
).
When RP# is at logic high, the device is in standard operation
.
When RP# transitions from logic-low to logic-high, the device resets all
blocks to locked and defaults to the read array mode.
WP#
INPUT
WRITE PROTECT:
Controls the lock-down function of the flexible
Locking feature
When WP# is a logic low, the lock-down mechanism is enabled
and
blocks marked lock-down cannot be unlocked through software.
When WP# is logic high, the lock-down mechanism is disabled
and
blocks previously locked-down are now locked and can be unlocked and
locked through software. After WP# goes low, any blocks previously
marked lock-down revert to that state.
See Section 3.3 for details on block locking.
V
CC
SUPPLY
DEVICE POWER SUPPLY:
[2.7 V–3.6 V] Supplies power for device
operations.
相關(guān)PDF資料
PDF描述
28F032C3 3 VOLT ADVANCED+ BOOT BLOCK. 8-. 16-. 32-MBIT FLASH MEMORY FAMILY
28F160F3 5V/3.3V or Adjustable, Low-Dropout, Low-IQ, 500mA Linear Regulators
28F800F3 3 Volt Fast Boot Block Flash Memory(3 V 8M位快速引導(dǎo)塊閃速存儲(chǔ)器)
28F160F3 16MBIT Fast Boot Block Flash Memory(16兆位的快速引導(dǎo)塊閃速存儲(chǔ)器)
28F2001BX-T 5V/3.3V or Adjustable, Low-Dropout, Low-IQ, 500mA Linear Regulators
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F016SV 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
28F016XD 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY
28F016XS 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
28F0181-1SR-10 功能描述:電磁干擾濾波珠子、扼流圈和陣列 115ohms 100MHz 10A Broad Band Frequency RoHS:否 制造商:AVX 阻抗: 最大直流電流:35 mA 最大直流電阻: 容差: 端接類型:SMD/SMT 電壓額定值:25 V 工作溫度范圍:- 25 C to + 85 C 封裝 / 箱體:0603 (1608 metric)
28F020 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY
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