參數(shù)資料
型號： 28F016SC
英文描述： Evaluation Kit/Evaluation System for the MAX5954L/MAX5954A
中文描述： 28F016SC -字節(jié)寬SmartVoltage FlashFile Memory系列4。 8。及16兆比特
文件頁數(shù)： 10/59頁
文件大?。?/td> 384K
代理商： 28F016SC
3 VOLT ADVANCED+ BOOT BLOCK
E
10
PRODUCT PREVIEW
Table 2. 3 Volt Advanced+ Boot Block Pin Descriptions
(Continued)
Symbol
Type
Name and Function
V
CCQ
INPUT
I/O POWER SUPPLY:
Supplies power for input/output buffers.
[2.7 V
–3.6 V] This input should be tied directly to V
CC
.
[1.65 V– 2.5 V] Lower I/O power supply voltage available upon request.
Contact your Intel representative for more information.
V
PP
INPUT/
SUPPLY
PROGRAM/ERASE POWER SUPPLY:
[1.65 V–3.6 V or 11.4 V–12.6 V]
Operates as a input at logic levels to control complete device protection.
Supplies power for accelerated program and erase operations in 12 V
±
5% range. This pin cannot be left floating.
Lower
V
PP
≤
V
PPLK
, to protect all contents
against Program and
Erase commands.
Set V
PP
= V
CC
for in-system read, program and erase operations
. In
this configuration, V
PP
can drop as low as 1.65 V to allow for resistor or
diode drop from the system supply. Note that if V
PP
is driven by a logic
signal, V
IH =
1.65. That is, V
PP
must remain above 1.65V to perform in-
system flash modifications.
Raise V
PP
to 12 V
±
5% for faster program and erase
in a production
environment. Applying 12 V
±
5% to V
PP
can only be done for a
maximum of 1000 cycles on the main blocks and 2500 cycles on the
parameter blocks.
V
PP
may be connected to 12 V for a total of 80 hours
maximum. See Section 3.4 for details on V
PP
voltage configurations.
GND
SUPPLY
GROUND:
For all internal circuitry. All ground inputs
must
be
connected.
NC
NO CONNECT:
Pin may be driven or left floating.
2.2
Block Organization
The
asymmetrically-blocked architecture that enables
system integration of code and data within a single
flash
device.
Each
block
independently of the others up to 100,000 times.
For the address locations of each block, see the
memory maps in Appendix E and F.
3 Volt
Advanced+
Boot
Block
is
an
can
be
erased
2.2.1
PARAMETER BLOCKS
The 3 Volt Advanced+ Boot Block flash memory
architecture includes parameter blocks to facilitate
storage of frequently updated small parameters
(i.e., data that would normally be stored in an
EEPROM). Each device contains eight parameter
blocks of 8-Kbytes/4-Kwords (8,192 bytes/4,096
words).
2.2.2
MAIN BLOCKS
After the parameter blocks, the remainder of the
array is divided into equal size (64-Kword/32-
Kword; 65,536 bytes/32,768 words) main blocks for
data or code storage. Each 8-Mbit, 16-Mbit, or
32-Mbit device contains 15, 31, or 63 main blocks,
respectively.
相關(guān)PDF資料
PDF描述
28F032C3 3 VOLT ADVANCED+ BOOT BLOCK. 8-. 16-. 32-MBIT FLASH MEMORY FAMILY
28F160F3 5V/3.3V or Adjustable, Low-Dropout, Low-IQ, 500mA Linear Regulators
28F800F3 3 Volt Fast Boot Block Flash Memory(3 V 8M位快速引導(dǎo)塊閃速存儲器)
28F160F3 16MBIT Fast Boot Block Flash Memory(16兆位的快速引導(dǎo)塊閃速存儲器)
28F2001BX-T 5V/3.3V or Adjustable, Low-Dropout, Low-IQ, 500mA Linear Regulators
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F016SV 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
28F016XD 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY
28F016XS 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
28F0181-1SR-10 功能描述:電磁干擾濾波珠子、扼流圈和陣列 115ohms 100MHz 10A Broad Band Frequency RoHS:否 制造商:AVX 阻抗: 最大直流電流:35 mA 最大直流電阻: 容差: 端接類型:SMD/SMT 電壓額定值:25 V 工作溫度范圍:- 25 C to + 85 C 封裝 / 箱體:0603 (1608 metric)
28F020 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*