參數(shù)資料
型號(hào): 28F016SC
英文描述: Evaluation Kit/Evaluation System for the MAX5954L/MAX5954A
中文描述: 28F016SC -字節(jié)寬SmartVoltage FlashFile Memory系列4。 8。及16兆比特
文件頁(yè)數(shù): 26/59頁(yè)
文件大?。?/td> 384K
代理商: 28F016SC
3 VOLT ADVANCED+ BOOT BLOCK
E
26
PRODUCT PREVIEW
4.3
T
A =
25 °C, f
=
1 MHz
Capacitance
Sym
Parameter
Notes
Typ
Max
Units
Conditions
C
IN
Input Capacitance
1
6
8
pF
V
IN
=
0 V
C
OUT
Output Capacitance
1
10
12
pF
V
OUT
=
0 V
NOTE:
1.
Sampled, not 100% tested.
4.4
DC Characteristics
V
CC
2.7 V
–3.6 V
V
CCQ
2.7 V–3.6 V
Sym
Parameter
Note
Typ
Max
Unit
Test Conditions
I
LI
Input Load Current
1,7
±
1
μA
V
CC
=
V
CC
Max
V
CCQ
=
V
CCQ
Max
V
IN
=
V
CCQ
or GND
V
CC
=
V
CC
Max
V
CCQ
=
V
CCQ
Max
V
IN
=
V
CCQ
or GND
I
LO
Output Leakage Current
1,7
0.2
±
10
μA
I
CCS
V
CC
Standby Current
1
10
25
μA
V
CC
=
V
CC
Max
CE#
=
RP#
=
V
CC
V
CC
=
V
CC
Max
V
CCQ
=
V
CCQ
Max
V
IN
=
V
CCQ
RP#
=
GND ± 0.2 V
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
OE# = V
IH
IL
f = 5 MHz, I
OUT
= 0 mA
Inputs = V
IL
or V
IH
V
PP
= V
PP1
Program in Progress
V
PP
=
V
PP2
(12 V)
Program in Progress
V
PP
=
V
PP1
Erase in Progress
V
PP
=
V
PP2
(12 V)
Erase in Progress
I
CCD
V
CC
Deep Power-Down
Current
1,7
7
20
μA
I
CCR
V
CC
Read Current
1,5,7
9
18
mA
I
CCW
V
CC
Program Current
1,4
18
55
mA
8
15
mA
I
CCE
V
CC
Erase Current
1,4
16
45
mA
8
15
mA
I
CCES
V
CC
Erase Suspend
Current
1,2,4
10
25
μA
CE# = V
IH
, Erase Suspend in
Progress
I
CCWS
V
Program Suspend
Current
1,2,4
10
25
μA
CE# = V
, Program
Suspend in Progress
相關(guān)PDF資料
PDF描述
28F032C3 3 VOLT ADVANCED+ BOOT BLOCK. 8-. 16-. 32-MBIT FLASH MEMORY FAMILY
28F160F3 5V/3.3V or Adjustable, Low-Dropout, Low-IQ, 500mA Linear Regulators
28F800F3 3 Volt Fast Boot Block Flash Memory(3 V 8M位快速引導(dǎo)塊閃速存儲(chǔ)器)
28F160F3 16MBIT Fast Boot Block Flash Memory(16兆位的快速引導(dǎo)塊閃速存儲(chǔ)器)
28F2001BX-T 5V/3.3V or Adjustable, Low-Dropout, Low-IQ, 500mA Linear Regulators
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F016SV 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
28F016XD 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY
28F016XS 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
28F0181-1SR-10 功能描述:電磁干擾濾波珠子、扼流圈和陣列 115ohms 100MHz 10A Broad Band Frequency RoHS:否 制造商:AVX 阻抗: 最大直流電流:35 mA 最大直流電阻: 容差: 端接類型:SMD/SMT 電壓額定值:25 V 工作溫度范圍:- 25 C to + 85 C 封裝 / 箱體:0603 (1608 metric)
28F020 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY