參數(shù)資料
型號(hào)： 28F016SC
英文描述： Evaluation Kit/Evaluation System for the MAX5954L/MAX5954A
中文描述： 28F016SC -字節(jié)寬SmartVoltage FlashFile Memory系列4。 8。及16兆比特
文件頁(yè)數(shù)： 49/59頁(yè)
文件大?。?/td> 384K
代理商： 28F016SC
E
C.5
3 VOLT ADVANCED+ BOOT BLOCK
49
PRODUCT PREVIEW
SYSTEM INTERFACE INFORMATION
The following device information can be useful in optimizing system interface software
Table C6. System Interface Information
Offset
Length
(bytes)
Description
8-Mbit, 16-Mbit, 32-Mbit
1Bh
01h
V
CC
Logic Supply Minimum Program/Erase Voltage
bits 7
–4 BCD volts
bits 3–0 BCD 100 mv
1B:27
1Ch
01h
V
CC
Logic Supply Maximum Program/Erase Voltage
bits 7–4 BCD volts
bits 3–0
BCD 100 mv
1C:36
1Dh
01h
V
PP
[Programming] Supply Minimum Program/Erase
Voltage
bits 7–4 HEX volts
bits 3–0 BCD 100 mv
1D:B4
1Eh
01h
V
PP
[Programming] Supply Maximum
Program/Erase Voltage
bits 7–4 HEX volts
bits 3–0 BCD 100 mv
1E:C6
1Fh
01h
Typical Time
-
Out per Single Byte/Word Program,
2
N
μ-sec
1F:05
20h
01h
Typical Time
-
Out for Max. Buffer Write, 2
N
μ-sec
20:00
21h
01h
Typical Time
-
Out per Individual Block Erase,
2
N
m-sec
21:0A
22h
01h
Typical Time
-
Out for Full Chip Erase, 2
N
m-sec
22:00
23h
01h
Maximum Time
-
Out for Byte/Word Program,
2
N
Times Typical
23:04
24h
01h
Maximum Time
-
Out for Buffer Write, 2
N
Times
Typical
24:00
25h
01h
Maximum Time
-
Out per Individual Block Erase,
2
N
Times Typical
25:03
26h
01h
Maximum Time
-
Out for Chip Erase, 2
N
Times
Typical
26:00
相關(guān)PDF資料
PDF描述
28F032C3 3 VOLT ADVANCED+ BOOT BLOCK. 8-. 16-. 32-MBIT FLASH MEMORY FAMILY
28F160F3 5V/3.3V or Adjustable, Low-Dropout, Low-IQ, 500mA Linear Regulators
28F800F3 3 Volt Fast Boot Block Flash Memory(3 V 8M位快速引導(dǎo)塊閃速存儲(chǔ)器)
28F160F3 16MBIT Fast Boot Block Flash Memory(16兆位的快速引導(dǎo)塊閃速存儲(chǔ)器)
28F2001BX-T 5V/3.3V or Adjustable, Low-Dropout, Low-IQ, 500mA Linear Regulators
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F016SV 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
28F016XD 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY
28F016XS 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
28F0181-1SR-10 功能描述:電磁干擾濾波珠子、扼流圈和陣列 115ohms 100MHz 10A Broad Band Frequency RoHS:否 制造商:AVX 阻抗: 最大直流電流:35 mA 最大直流電阻: 容差: 端接類(lèi)型:SMD/SMT 電壓額定值:25 V 工作溫度范圍:- 25 C to + 85 C 封裝 / 箱體:0603 (1608 metric)
28F020 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*