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參數資料
| 型號： | 21103 |
| 英文描述： | AMD-K6 Processor Family Thermal Solutions Application Note AMD-K6 Processor Power Supply Design Application Note |
| 中文描述： | 的AMD - K6處理器系列散熱解決方案應用指南的AMD - K6處理器電源設計應用指南 |
| 文件頁數： | 30/64頁 |
| 文件大小： | 1056K |
| 代理商： | 21103 |
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20
Decoupling and Layout Recommendations
AMD-K6
Processor Power Supply Design
21103G/0—February 1999
Decoupling Capacitance and Component Placement
The high-frequency decoupling capacitors (C5–C31 in Figure 11
on page 22) should be located as close to the processor power
and ground pins as possible. To minimize resistance and
inductance in the lead length, the use of surface mounted
capacitors is recommended. When possible, use traces to
connect capacitors directly to the processor’s power and ground
pins. In most cases, the decoupling capacitors can be placed in
the Socket 7 cavity on the same side of the processor
(component side) or the opposite side (bottom side).
Figure 11 on page 22 shows a suggested component placement
for the decoupling capacitors. The values of the capacitors are
specified in Table 5 on page 22. The split voltage planes should
be isolated if they are in the same layer of the circuit board. To
separate the two power planes, an isolation region with a
minimum width of 0.254 mm is recommended. The ground
plane should never be split.
These recommendations are based on single-sided component
assembly and general space constraints. The designer should
assume these are minimum requirements. If double-sided
component assembly is used, it is preferable to use more
capacitors of a smaller value, which reduces the total ESR and
total ESL of the capacitors. For example, instead of four 470-
μ
F
capacitors, use ten 47-
μ
F capacitors. (Check the device
specifications shown in Table 3. Occasionally a lower value
capacitance has a higher ESR.) As the effective ESR is lowered,
the total required capacitance is reduced. The breakdown
voltage and case size both affect the ESR value.
Via inductance can be reduced when using double-sided
component assembly. Components can share vias on the top
side and bottom side. This technique reduces the effective via
inductance. Because double-sided assembly is rarely used in
Table 3.
Representative ESR Values
Capacitance
470
μ
F
270
μ
F
100
μ
F
68
μ
F
47
μ
F
Device 1
55 m
70 m
90 m
95 m
120 m
Device 2
100 m
100 m
100 m
100 m
250 m
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