參數(shù)資料
型號: μPD45D128442
廠商: NEC Corp.
英文描述: 128 M-bit Synchronous DRAM with Double Data Rate(128 同步動態(tài)RAM)
中文描述: 128 M位同步雙數(shù)據(jù)速率(128同步動態(tài)RAM的內(nèi)存)
文件頁數(shù): 29/80頁
文件大?。?/td> 637K
代理商: ΜPD45D128442
29
μ
PD45D128442, 45D128842, 45D128164
Preliminary Data Sheet
10.2 Write with Auto Precharge
When a write with auto precharge command is issued, the auto precharge begins after t
DPL(MIN.)
is satisfied.
CLK
Burst length = 2
D1
WRITEA
DQ
Command
DQS
/CAS latency = 2, 2.5
/CLK
CKE
ACT
t
DPL
= 1 cycle
(When t
RAS
is satisfied)
D2
t
RP
Auto precharge starts
t
DAL
= t
DPL
+ t
RP
T0
T2
T1
T3
T4
T5
Remark
WRITEA means Write with Auto Precharge command
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