參數(shù)資料
型號(hào): μPD4516421A
廠(chǎng)商: NEC Corp.
英文描述: 16M-bit Synchronous DRAM(16M 同步動(dòng)態(tài)RAM)
中文描述: 1,600位同步DRAM(1,600同步動(dòng)態(tài)RAM)的
文件頁(yè)數(shù): 11/86頁(yè)
文件大?。?/td> 904K
代理商: ΜPD4516421A
μ
PD4516421A, 4516821A, 4516161A for Rev. P
11
2. Commands
Mode register set command
(CS, RAS, CAS, WE = Low)
The
μ
PD4516
×××
A has a mode register that defines how the device
operates. In this command, A0 through A11 are the data input pins. After
power on, the mode register set command must be executed to initialize the
device.
The mode register can be set only when both banks are in idle state.
During 2CLK (t
RSC
) following this command, the
μ
PD4516
×××
A cannot
accept any other commands.
Activate command
(CS, RAS = Low, CAS, WE = High)
The
μ
PD4516
×××
A has two banks, each with 2,048 rows.
This command activates the bank selected by A11 (BS) and a row
address selected by A0 through A10.
This command corresponds to a conventional DRAM’s RAS falling.
Precharge command
(CS, RAS, WE = Low, CAS = High)
This command begins precharge operation of the bank selected by A11
(BS). When A10 is High, both banks are precharged, regardless of A11.
When A10 is Low, only the bank selected by A11 is precharged. A11 low
selects bank A and A11 high selects bank B.
After this command, the
μ
PD4516
×××
A can’t accept the activate com-
mand to the precharging bank during t
RP
(precharge to activate command
period).
This command corresponds to a conventional DRAM’s RAS rising.
Fig. 1 Mode register set
command
Add
A10
A11
WE
CAS
RAS
CS
CKE
CLK
H
Fig. 2 Row address strobe and
bank active command
Add
A10
WE
CAS
RAS
CS
CKE
CLK
H
Row
Row
(Bank select)
Fig. 3 Precharge command
Add
A10
A11
WE
CAS
RAS
CS
CKE
CLK
H
(Bank select)
(Precharge select)
相關(guān)PDF資料
PDF描述
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