參數(shù)資料
型號: WV3EG232M64STSU335D4SG
英文描述: 512MB - 2x32Mx64 DDR SDRAM UNBUFFERED
中文描述: 512MB的- 2x32Mx64 DDR SDRAM內(nèi)存緩沖
文件頁數(shù): 6/14頁
文件大?。?/td> 195K
代理商: WV3EG232M64STSU335D4SG
6
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WV3EG232M64STSU-D4
September 2005
Rev. 1
PRELIMINARY
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
AC OPERATING TEST CONDITIONS
-40°C
T
A
85°C
Symbol
V
IH(AC)
V
IL(AC)
V
ID(AC)
V
IX(AC)
Parameter/Condition
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Differential Voltage, CK and CK# inputs
Input Crossing Point Voltage, CK and CK# inputs
Based on
SAMSUNG
components.
NOTES:
1.
V
IH
overshoot: V
IH
= V
CCQ
+1.5V for a pulse width < 3ns and the pulse can not be greater than 1/3 of the cycle rate.
V
IL
undershoot: V
IL
= -1.5V for a pulse width < 3ns and the pulse can not be greater than 1/3 of the cycle rate.
Min
Max
Unit
V
V
V
V
Note
1
1
V
REF
+0.31
V
REF
-0.31
V
CCQ
+0.6
0.5*V
CCQ
+0.2
0.7
0.5*V
CCQ
-0.2
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