參數資料
型號: WSE128K16-42G2TMA
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: 存儲器
英文描述: SPECIALTY MEMORY CIRCUIT, CQMA68
封裝: CERAMIC, QFP-68
文件頁數: 15/15頁
文件大?。?/td> 635K
代理商: WSE128K16-42G2TMA
WSE128K16-XXX
9
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
PRELIMINARY
White Electronic Designs Corp. reserves the right to change products or specications without notice.
March 2005
Rev. 3
EEPROM DATA POLLING
The WSE128K16-XXX offers a data polling feature for
the EEPROM which allows a faster method of writing to
the device. Figure 11 shows the timing diagram for this
function. During a byte or page write cycle, an attempted
read of the last byte written will result in the complement
of the written data on D7 (for each chip.) Once the write
cycle has been completed, true data is valid on all outputs
and the next cycle may begin. Data polling may begin at
any time during the write cycle.
FIGURE 10 – EEPROM DATA POLLING WAVEFORMS
EEPROM DATA POLLING CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
Min
Max
Unit
Data Hold Time
tDH
10
ns
OE# Hold Time
tOEH
10
ns
OE# To Output Valid
tOE
55
ns
Write Recovery Time
tWR
0ns
EWE#1-2
ECS#1-2
OE#
ED7
ADDRESS
tOEH
tDH
tOE
tWR
HIGH Z
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