- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄245706 > WSE128K16-42G2TMA (MICROSEMI CORP-PMG MICROELECTRONICS) SPECIALTY MEMORY CIRCUIT, CQMA68 PDF資料下載
參數(shù)資料
| 型號： | WSE128K16-42G2TMA |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | 存儲器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, CQMA68 |
| 封裝： | CERAMIC, QFP-68 |
| 文件頁數(shù)： | 12/15頁 |
| 文件大小： | 635K |
| 代理商： | WSE128K16-42G2TMA |
WSE128K16-XXX
6
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
PRELIMINARY
White Electronic Designs Corp. reserves the right to change products or specications without notice.
March 2005
Rev. 3
EEPROM WRITE
A write cycle is initiated when OE# is high and a low pulse
is on EWE# or ECS# with ECS# or EWE# low. The address
is latched on the falling edge of ECS# or EWE# whichever
occurs last. The data is latched by the rising edge of ECS#
or EWE#, whichever occurs rst. A byte write operation
will automatically continue to completion.
WRITE CYCLE TIMING
Figures 7 and 8 show the write cycle timing relationships.
A write cycle begins with address application, write enable
and chip select. Chip select is accomplished by placing the
ECS# line low. Write enable consists of setting the EWE#
line low. The write cycle begins when the last of either
ECS# or EWE# goes low.
The EWE# line transition from high to low also initiates
an internal 150 μsec delay timer to permit page mode
operation. Each subsequent EWE# transition from high
to low that occurs before the completion of the 150 μsec
time out will restart the timer from zero. The operation of
the timer is the same as a retriggerable one-shot.
EEPROM AC WRITE CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
Write Cycle Parameter
Symbol
Min
Max
Unit
Write Cycle Time, TYP = 6ms
tWC
10
ms
Address Set-up Time
tAS
0ns
Write Pulse Width (EWE# or ECS#)
tWP
150
ns
Chip Select Set-up Time
tCS
0ns
Address Hold Time
tAH
100
ns
Data Hold Time
tDH
10
ns
Chip Select Hold Time
tCSH
0ns
Data Set-up Time
tDS
100
ns
Output Enable Set-up Time
tOES
10
ns
Output Enable Hold Time
tOEH
10
ns
Write Pulse Width High
tWPH
50
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WED2ZL362MS30BC | 2M X 36 MULTI DEVICE SRAM MODULE, 3 ns, PBGA119 |
| WS128K32L-25G2UM | 128K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CQFP68 |
| W3H64M72E-SBM | 64M X 72 DDR DRAM, PBGA208 |
| WF4M8-150OPC5 | 4M X 8 FLASH 5V PROM, 150 ns, CDSO56 |
| WS128K32V-20HS | 512K X 8 MULTI DEVICE SRAM MODULE, 20 ns, HIP66 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WSE128K16-42H1C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128KX16 SRAM/EEPROM MODULE |
| WSE128K16-42H1CA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128KX16 SRAM/EEPROM MODULE |
| WSE128K16-42H1I | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-42H1IA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-42H1M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128KX16 SRAM/EEPROM MODULE |
發(fā)布緊急采購，3分鐘左右您將得到回復。