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參數(shù)資料
| 型號(hào)： | W971GG6IB-25 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | 32M X 16 DDR DRAM, 0.4 ns, PBGA84 |
| 封裝： | 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84 |
| 文件頁(yè)數(shù)： | 25/86頁(yè) |
| 文件大?。?/td> | 1360K |
| 代理商： | W971GG6IB-25 |
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W971GG6IB
Publication Release Date: Oct. 23, 2009
- 31 -
Revision A02
8. OPERATION MODE
8.1 Command Truth Table
CKE
COMMAND
Previous
Cycle
Current
Cycle
BA2
BA1
BA0
A12
A11
A10
A9-A0
CS
RAS
CAS
WE
NOTES
Bank Activate
H
BA
Row Address
L
H
1,2
Single Bank
Precharge
H
BA
X
L
X
L
H
L
1,2
Precharge All
Banks
H
X
H
X
L
H
L
1
Write
H
BA
Column
L
Column
L
H
L
1,2,3
Write with Auto-
precharge
H
BA
Column
H
Column
L
H
L
1,2,3
Read
H
BA
Column
L
Column
L
H
L
H
1,2,3
Read with Auto-
precharge
H
BA
Column
H
Column
L
H
L
H
1,2,3
(Extended)
Mode Register
Set
H
BA
OP Code
L
1,2
No Operation
H
X
L
H
1
Device Deselect
H
X
H
X
1
Refresh
H
X
L
H
1
Self Refresh
Entry
H
L
X
L
H
1,4
H
X
Self Refresh Exit
L
H
X
L
H
1,4,5
H
X
Power Down
Mode Entry
H
L
X
L
H
1,6
H
X
Power Down
Mode Exit
L
H
X
L
H
1,6
Notes:
1. All DDR2 SDRAM commands are defined by states of CS , RAS , CAS ,
WE and CKE at the rising edge of the clock.
2. Bank addresses BA [2:0] determine which bank is to be operated upon. For (E)MRS BA selects an (Extended) Mode Register.
3. Burst reads or writes at BL = 4 can not be terminated or interrupted. See Burst Interrupt in section 7.5 for details.
4. VREF must be maintained during Self Refresh operation.
5. Self Refresh Exit is asynchronous.
6. The Power Down does not perform any refresh operations. The duration of Power Down Mode is therefore limited by the
refresh requirements outlined in section 7.9.
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| W9751G6JB-25A | 32M X 16 DDR DRAM, 0.4 ns, PBGA84 |
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| W9812G21H-6C | 4M X 32 SYNCHRONOUS DRAM, 4.5 ns, PDSO86 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W971GG6JB | 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M ? 8 BANKS ? 16 BIT DDR2 SDRAM |
| W971GG6JB-18 | 制造商:Winbond Electronics Corp 功能描述:1GB DDR2 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 1GBIT 1.875NS |
| W971GG6JB-25 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin WBGA 制造商:Winbond Electronics 功能描述:64MBX16 DDR2 制造商:Winbond 功能描述:DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin WBGA |
| W971GG6JB25I | 功能描述:IC DDR2 SDRAM 1GBIT 84WBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR |
| W971GG6JB-25I | 制造商:Winbond Electronics 功能描述:-40~85 1GB DDR2 FOR INDUSTRY |
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