參數(shù)資料
型號： W971GG6IB-25
廠商： WINBOND ELECTRONICS CORP
元件分類： DRAM
英文描述： 32M X 16 DDR DRAM, 0.4 ns, PBGA84
封裝： 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84
文件頁數(shù)： 23/86頁
文件大小： 1360K
代理商： W971GG6IB-25
W971GG6IB
Publication Release Date: Oct. 23, 2009
- 3 -
Revision A02
10.1
Command Input Timing.......................................................................................................................67
10.2
Timing of the CLK Signals...................................................................................................................67
10.3
ODT Timing for Active/Standby Mode.................................................................................................68
10.4
ODT Timing for Power Down Mode ....................................................................................................68
10.5
ODT Timing mode switch at entering power down mode....................................................................69
10.6
ODT Timing mode switch at exiting power down mode ......................................................................70
10.7
Data output (read) timing ....................................................................................................................71
10.8
Burst read operation: RL=5 (AL=2, CL=3, BL=4) ................................................................................71
10.9
Data input (write) timing ......................................................................................................................72
10.10
Burst write operation: RL=5 (AL=2, CL=3, WL=4, BL=4)...........................................................72
10.11
Seamless burst read operation: RL = 5 ( AL = 2, and CL = 3, BL = 4) ......................................73
10.12
Seamless burst write operation: RL = 5 ( WL = 4, BL = 4).........................................................73
10.13
Burst read interrupt timing: RL =3 (CL=3, AL=0, BL=8).............................................................74
10.14
Burst write interrupt timing: RL=3 (CL=3, AL=0, WL=2, BL=8) ..................................................74
10.15
Write operation with Data Mask: WL=3, AL=0, BL=4) ...............................................................75
10.16
Burst read operation followed by precharge: RL=4 (AL=1, CL=3, BL=4, tRTP≦2clks).............76
10.17
Burst read operation followed by precharge: RL=4 (AL=1, CL=3, BL=8, tRTP≦2clks).............76
10.18
Burst read operation followed by precharge: RL=5 (AL=2, CL=3, BL=4, tRTP≦2clks).............77
10.19
Burst read operation followed by precharge: RL=6 (AL=2, CL=4, BL=4, tRTP≦2clks).............77
10.20
Burst read operation followed by precharge: RL=4 (AL=0, CL=4, BL=8, tRTP>2clks) ..............78
10.21
Burst write operation followed by precharge: WL = (RL-1) = 3 ..................................................78
10.22
Burst write operation followed by precharge: WL = (RL-1) = 4 ..................................................79
10.23
Burst read operation with Auto-precharge: RL=4 (AL=1, CL=3, BL=8, tRTP≦2clks)................79
10.24
Burst read operation with Auto-precharge: RL=4 (AL=1, CL=3, BL=4, tRTP>2clks) .................80
10.25
Burst read with Auto-precharge followed by an activation to the same bank (tRC Limit): RL=5
(AL=2, CL=3, internal tRCD=3, BL=4, tRTP≦2clks) .......................................................................................80
10.26
Burst read with Auto-precharge followed by an activation to the same bank (tRP Limit): RL=5
(AL=2, CL=3, internal tRCD=3, BL=4, tRTP≦2clks) .......................................................................................81
10.27
Burst write with Auto-precharge (tRC Limit): WL=2, WR=2, BL=4, tRP=3.................................81
10.28
Burst write with Auto-precharge (WR + tRP Limit): WL=4, WR=2, BL=4, tRP=3.......................82
10.29
Self Refresh Timing ...................................................................................................................82
10.30
Active Power Down Mode Entry and Exit Timing.......................................................................83
10.31
Precharged Power Down Mode Entry and Exit Timing..............................................................83
10.32
Clock frequency change in precharge Power Down mode ........................................................84
11.
PACKAGE SPECIFICATION ..............................................................................................................85
Package Outline WBGA-84 (8x12.5 mm
2).......................................................................................................85
12.
REVISION HISTORY ..........................................................................................................................86
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W971GG6JB 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M ? 8 BANKS ? 16 BIT DDR2 SDRAM
W971GG6JB-18 制造商:Winbond Electronics Corp 功能描述:1GB DDR2 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 1GBIT 1.875NS
W971GG6JB-25 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin WBGA 制造商:Winbond Electronics 功能描述:64MBX16 DDR2 制造商:Winbond 功能描述:DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin WBGA
W971GG6JB25I 功能描述:IC DDR2 SDRAM 1GBIT 84WBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR
W971GG6JB-25I 制造商:Winbond Electronics 功能描述:-40~85 1GB DDR2 FOR INDUSTRY
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