參數(shù)資料
型號(hào)： W949D2CBJX6E
廠商： WINBOND ELECTRONICS CORP
元件分類(lèi)： DRAM
英文描述： 16M X 32 DDR DRAM, 5 ns, PBGA90
封裝： 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90
文件頁(yè)數(shù)： 20/60頁(yè)
文件大?。?/td> 1160K
代理商： W949D2CBJX6E
W949D6CB / W949D2CB
512Mb Mobile LPDDR
Publication Release Date: Jun, 14, 2011
- 27 -
Revision A01-006
A subsequent ACTIVE command to another bank can be issued while the first bank is being accessed, which results
in a reduction of total row-access overhead. The minimum time interval between two successive ACTIVE commands
on different banks is defined by tRRD.
The row remains active until a PRECHARGE command (or READ or WRITE command with Auto Precharge) is
issued to the bank.
A PRECHARGE (or READ with Auto Precharge or Write with Auto Precharge) command must be issued before
opening a different row in the same bank.
7.4.2 Bank Activation Command Cycle
NOP
ACT
NOP
RD/WR
Row
Col
BA x
BA y
tRCD
tRRD
= Don't Care
CK
Command
A0-An
BA0,BA1
7.5. Read
The READ command is used to initiate a burst read access to an active row, with a burst length as set in the Mode
Register. BA0 and BA1 select the bank, and the address inputs select the starting column location. The value of A10
determines whether or not Auto Pre-charge is used. If Auto Pre-charge is selected, the row being accessed will be
pre-charged at the end of the read burst; if Auto Pre-charge is not selected, the row will remain open for subsequent
accesses.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W949D2CBJX6ETR 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 166MHZ, 65NM
W949D2CBJX6G 制造商:WINBOND 制造商全稱(chēng):Winbond 功能描述:512Mb Mobile LPDDR
W949D2KBJX5E 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ 制造商:Winbond Electronics Corp 功能描述:IC MEMORY
W949D2KBJX5I 制造商:Winbond Electronics Corp 功能描述:IC MEMORY
W949D2KBJX6E 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 166MHZ 制造商:Winbond Electronics Corp 功能描述:IC MEMORY
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