參數(shù)資料
型號: W948D6FBHX6E
廠商: WINBOND ELECTRONICS CORP
元件分類: DRAM
英文描述: 8M X 16 DDR DRAM, 5 ns, PBGA60
封裝: 8 X 9 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-60
文件頁數(shù): 21/60頁
文件大小: 1147K
代理商: W948D6FBHX6E
W948D6FB / W948D2FB
256Mb Mobile LPDDR
Publication Release Date : May, 24, 2011
- 28 -
Revision A01-003
7.5.1 Read Command
= Don't Care
(High)
CK
CKE
CS
RAS
CAS
WE
A0-An
CA
AP
BA=BANK Address CA=Coulmn Address AP=Auto
Precharge
BA
BA0,BA1
A10
Enable AP
Disable AP
The basic Read timing parameters for DQs are shown in following figure; they apply to all Read operations.
7.5.2 Basic Read Timing Parameters
CK
tDQSQmax
tAC
tLZ
tQH
tHZ
DO n+3
DO n+2
DO n+1
DO n
tRPRE
tRPST
tDQSCK
tDQSQmax
tAC
tLZ
tQH
tHZ
DO n+3
DO n+2
DO n+1
DO n
tRPRE
tRPST
tDQSCK
= Don,t Care
1)DO n=Data Out from column n
2)All DQ are vaild tAC after the CK edge.
All DQ are valid tDQSQ after the DQS edge, regardless of tAC
DQS
DQ
DQS
DQ
tCK
tACmax
tACmin
tCK
tCH
tCL
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W948D6FBHX6ETR 制造商:Winbond Electronics Corp 功能描述:256M MDDR, X16, 166MHZ, 65NM
W948D6FBHX6G 制造商:WINBOND 制造商全稱:Winbond 功能描述:256Mb Mobile LPDDR
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W949D2CBJX5E 功能描述:IC LPDDR SDRAM 512MBIT 90VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G(256M x 16) 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP(0.724",18.40mm 寬) 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
W949D2CBJX5ETR 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ