參數(shù)資料
型號: W948D6FBHX6E
廠商: WINBOND ELECTRONICS CORP
元件分類: DRAM
英文描述: 8M X 16 DDR DRAM, 5 ns, PBGA60
封裝: 8 X 9 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-60
文件頁數(shù): 20/60頁
文件大?。?/td> 1147K
代理商: W948D6FBHX6E
W948D6FB / W948D2FB
256Mb Mobile LPDDR
Publication Release Date : May, 24, 2011
- 27 -
Revision A01-003
A subsequent ACTIVE command to another bank can be issued while the first bank is being accessed, which results
in a reduction of total row-access overhead. The minimum time interval between two successive ACTIVE commands
on different banks is defined by tRRD.
The row remains active until a PRECHARGE command (or READ or WRITE command with Auto Precharge) is
issued to the bank.
A PRECHARGE (or READ with Auto Precharge or Write with Auto Precharge) command must be issued before
opening a different row in the same bank.
7.4.2 Bank Activation Command Cycle
NOP
ACT
NOP
RD/WR
Row
Col
BA x
BA y
tRCD
tRRD
= Don't Care
CK
Command
A0-An
BA0,BA1
7.5. Read
The READ command is used to initiate a burst read access to an active row, with a burst length as set in the Mode
Register. BA0 and BA1 select the bank, and the address inputs select the starting column location. The value of A10
determines whether or not Auto Pre-charge is used. If Auto Pre-charge is selected, the row being accessed will be
pre-charged at the end of the read burst; if Auto Pre-charge is not selected, the row will remain open for subsequent
accesses.
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相關代理商/技術參數(shù)
參數(shù)描述
W948D6FBHX6ETR 制造商:Winbond Electronics Corp 功能描述:256M MDDR, X16, 166MHZ, 65NM
W948D6FBHX6G 制造商:WINBOND 制造商全稱:Winbond 功能描述:256Mb Mobile LPDDR
W949D2CB 制造商:WINBOND 制造商全稱:Winbond 功能描述:512Mb Mobile LPDDR
W949D2CBJX5E 功能描述:IC LPDDR SDRAM 512MBIT 90VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G(256M x 16) 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP(0.724",18.40mm 寬) 供應商設備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
W949D2CBJX5ETR 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ