參數(shù)資料
型號： W25X80ALDAIZ
廠商： WINBOND ELECTRONICS CORP
元件分類： PROM
英文描述： 1M X 8 FLASH 2.7V PROM, PDIP8
封裝： 0.300 INCH, ROHS COMPLIANT, PLASTIC, DIP-8
文件頁數(shù)： 10/45頁
文件大?。?/td> 1342K
代理商： W25X80ALDAIZ
W25X10AL, W25X20AL, W25X40AL, W25X80AL
- 18 -
10.2.6 Write Status Register (01h)
The Write Status Register instruction allows the Status Register to be written. A Write Enable
instruction must previously have been executed for the device to accept the Write Status Register
Instruction (Status Register bit WEL must equal 1). Once write enabled, the instruction is entered by
driving /CS low, sending the instruction code “01h”, and then writing the status register data byte as
illustrated in figure 7. The Status Register bits are shown in figure 3 and described earlier in this
datasheet.
Only non-volatile Status Register bits SRP, TB, BP2, BP1 and BP0 (bits 7, 5, 4, 3 and 2) can be
written to. All other Status Register bit locations are read-only and will not be affected by the Write
Status Register instruction.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not
done the Write Status Register instruction will not be executed. After /CS is driven high, the self-timed
Write Status Register cycle will commence for a time duration of tW (See AC Characteristics). While
the Write Status Register cycle is in progress, the Read Status Register instruction may still accessed
to check the status of the BUSY bit. The BUSY bit is a 1 during the Write Status Register cycle and a
0 when the cycle is finished and ready to accept other instructions again. After the Write Register
cycle has finished the Write Enable Latch (WEL) bit in the Status Register will be cleared to 0.
The Write Status Register instruction allows the Block Protect bits (TB, BP2, BP1 and BP0) to be set
for protecting all, a portion, or none of the memory from erase and program instructions. Protected
areas become read-only (see Status Register Memory Protection table). The Write Status Register
instruction also allows the Status Register Protect bit (SRP) to be set. This bit is used in conjunction
with the Write Protect (/WP) pin to disable writes to the status register. When the SRP bit is set to a 0
state (factory default) the /WP pin has no control over the status register. When the SRP pin is set to a
1, the Write Status Register instruction is locked out while the /WP pin is low. When the /WP pin is
high the Write Status Register instruction is allowed.
Figure 7. Write Status Register Instruction Sequence Diagram
相關(guān)PDF資料
PDF描述
WS512K32L-15H1Q 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CPGA66
WS512K32L-15H1M 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CPGA66
WS512K32L-15G4TMA 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68
WS512K32-45H1C 512K X 32 MULTI DEVICE SRAM MODULE, 45 ns, CPGA66
WS512K32-15H1CA 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CPGA66
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W25X80ALSNIG 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
W25X80ALSNIZ 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
W25X80ALSSIG 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
W25X80ALSSIZ 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
W25X80ALZPIG 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
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