- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄245691 > W25Q16CVDAAG (WINBOND ELECTRONICS CORP) 16M X 1 SPI BUS SERIAL EEPROM, PDIP8 PDF資料下載
參數(shù)資料
| 型號(hào)： | W25Q16CVDAAG |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 16M X 1 SPI BUS SERIAL EEPROM, PDIP8 |
| 封裝： | 0.300 INCH, GREEN, PLASTIC, DIP-8 |
| 文件頁數(shù)： | 38/79頁 |
| 文件大?。?/td> | 1131K |
| 代理商： | W25Q16CVDAAG |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁當(dāng)前第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁
W25Q16CV
Publication Release Date: April 01, 2011
- 43 -
Revision C
DO
(IO
1)
7.2.23 Sector Erase (20h)
The Sector Erase instruction sets all memory within a specified sector (4K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Sector Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0) (see Figure 2). The
Sector Erase instruction sequence is shown in Figure 21.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the
Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector Erase
instruction will commence for a time duration of tSE (See AC Characteristics). While the Sector Erase
cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of
the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. After the Sector Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector Erase
instruction will not be executed if the addressed page is protected by the Block Protect (CMP, SEC, TB,
BP2, BP1, and BP0) bits (see Status Register Memory Protection table).
/CS
CLK
DI
(IO
0)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (20h)
High Impedance
8
9
29
30
31
24-Bit Address
23
22
2
1
0
*
Mode 0
Mode 3
= MSB
*
Figure 21. Sector Erase Instruction Sequence Diagram
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WMS512K8-17CQ | 512K X 8 STANDARD SRAM, 17 ns, CDIP32 |
| WMS512K8-20FQ | 512K X 8 STANDARD SRAM, 20 ns, CDFP36 |
| WMS512K8-45CQ | 512K X 8 STANDARD SRAM, 45 ns, CDIP32 |
| WF2M32S-80G4TI | 8M X 8 FLASH 5V PROM MODULE, 80 ns, CQFP68 |
| WPF512K8C90TFM5 | 512K X 8 FLASH 5V PROM, 90 ns, PDSO32 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W25Q16CVDAAP | 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q16CVDAIG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q16CVDAIP | 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q16CVSFAG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q16CVSFAP | 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。